Currently, a large amount of perfluorocarbon (PFC) gases are used in cleaning after chemical vapor deposition and in display and semiconductor manufacturing. These PFC gases are in a very chemically stable state and are a major cause of global warming...
Currently, a large amount of perfluorocarbon (PFC) gases are used in cleaning after chemical vapor deposition and in display and semiconductor manufacturing. These PFC gases are in a very chemically stable state and are a major cause of global warming effects. As such, PFCs have a high global warming index, GWP, but must be used to produce high aspect ratio patterns in semiconductor processes. For that reason, many researchers are working on ways to reduce the emissions of PFC gases to high levels of GWP in order to reduce greenhouse gases, and to reuse them through recovery. Among these studies, as a method of suppressing the emission of PFC gas at a high GWP state, there are a chemical decomposition method and a plasma decomposition method. In the case of the chemical decomposition method, since the PFC gas is decomposed using activated carbon at a high temperature, the consumption of activated carbon increases in proportion to the amount of greenhouse gas treatment. This is expensive to replace the activated carbon or to maintain the system, there is a disadvantage that the process is stopped for this purpose. In the case of the plasma decomposition method, PFC gas is treated using plasma, which is not suitable for mass processing, and has a disadvantage of using a lot of electricity for plasma generation. In the case of membrane separation, it is a research method on reuse, which requires particulate filtration and various treatment processes to reuse the recovered gas, and there is a burden of additional costs. In this study, to overcome the problems in using PFC gas, we studied the gas that can replace C4F8 which is widely used in the current semiconductor process. Among them, C5F8 has low GWP (Global Warming Potential) index and is liquid at room temperature. Therefore, C5F8 is considered to have relatively easy characteristics for recovery through recovery. Through the etching process, adsorption and recovery studies were conducted through an adsorption module that produced high-purity gases emitted over 90%. In addition, a comparative analysis study was conducted on whether the recovered C5F8 gas was recovered in a pure state by reusing it again using the recovered gas.