The compact (c-Cu<SUB>x</SUB>S) and the porous (p-Cu<SUB>x</SUB>S) with particle decorated films of coppers-ulfidearesynthesized using a chemical bath deposition technique, and the films are characterized using electrochemical ...

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107548662
Lim, I. ; Lee, D.Y. ; Patil, S.A. ; Shrestha, N.K. ; Kang, S.H. ; Nah, Y.C. ; Lee, W. ; Han, S.H.
2014
-
SCOPUS,SCIE
학술저널
562-568(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
The compact (c-Cu<SUB>x</SUB>S) and the porous (p-Cu<SUB>x</SUB>S) with particle decorated films of coppers-ulfidearesynthesized using a chemical bath deposition technique, and the films are characterized using electrochemical ...
The compact (c-Cu<SUB>x</SUB>S) and the porous (p-Cu<SUB>x</SUB>S) with particle decorated films of coppers-ulfidearesynthesized using a chemical bath deposition technique, and the films are characterized using electrochemical techniques. In addition, the chemically deposited Cu<SUB>x</SUB>S films are investigated as a counter electrode in quantum dots-sensitized solar cells (QSSCs). The available redox active reaction sites of the p-Cu<SUB>x</SUB>S film are found to be 57.9% higher than those available in the c-Cu<SUB>x</SUB>S film. From the electrochemical impedance spectroscopy, the effective diffusion coefficients of the polysulfide electrolyte in the c-Cu<SUB>x</SUB>S and p-Cu<SUB>x</SUB>S films are estimated to be 3.67 x 10<SUP>-5</SUP> and 6.35 x 10<SUP>-5</SUP> cm<SUP>2</SUP> s<SUP>-1</SUP>, respectively. These results can be ascribed to the improvement in the available redox active reaction sites and the electrocatalytic activity of the Cu<SUB>x</SUB>S counter electrode. As compared to the c-Cu<SUB>x</SUB>S film, the p-Cu<SUB>x</SUB>S film as a counter electrode exhibits an enhanced photovoltaic performance of the QSSCs with the power conversion efficiency of 3.17%, short-circuit current of 11.89 mA c<SUP>-</SUP>m<SUP>2</SUP>, open-circuit voltage of 0.50 V, and fill factor of 53.29. The improved performance of the QSSCs is ascribed to the improvements on the available redox active reaction sites, electrocatalytic activity and the diffusion coefficients, which are directly related to the surface morphology of the sulfide films.
Simple coating method of carbonaceous film onto copper nanopowder using PVP as solid carbon source
Semiconductor Devices on Single Crystalline and Unconventional Substrates
광주과학기술원 찰스 투Semiconductor memory device
광주과학기술원 황현상, 알렉스 이그나티브Quantum mechanics for semiconductor
경북대학교 김학린이공계 학생을 위한 핵심반도체 개론[Introduction to Core Semiconductors for Science and Engineering Students]
K-MOOC 인하공업전문대학 이선우, 엄우용이공계 학생을 위한 핵심반도체 개론[Introduction to Core Semiconductors for Science and Engineering Students]
K-MOOC 인하공업전문대학 이선우, 엄우용