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      공정 조건에 따른 비정질 탄소막 표면 물성분석 = Surface Properties of ACL Thin Films Depending on Process Conditions

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      https://www.riss.kr/link?id=A106260562

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      다국어 초록 (Multilingual Abstract)

      Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with C3H6 and N2 gas mixture.
      Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of sp2 and sp3 through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.
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      Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the ...

      Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with C3H6 and N2 gas mixture.
      Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of sp2 and sp3 through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

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      참고문헌 (Reference)

      1 조일형, "실험계획법중 Box-Behnken(박스-벤켄)법을 이용한 반응성 염료의 광촉매 산화조건 특성 해석 및 최적화" 대한환경공학회 28 (28): 917-925, 2006

      2 정선호, "그래핀 옥사이드/카르복실화한 스티렌-부타디엔 고무 나노 복합체에 관한 연구" 한국반도체디스플레이기술학회 16 (16): 52-58, 2017

      3 Koidl, P., "Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films" 52 : 41-70, 1991

      4 Peng, X.L., "Mechanical Stability of DLC Films on Metallic Substrates: Part I-Film Structure and Residual Stress Levels" 312 (312): 207-218, 1998

      5 Chun, H., "Hydrocarbon Plasma of a Low-Pressure Arc Discharge for Deposition of Highly-Adhesive Hydrogenated DLC films" 2 (2): 1-5, 2003

      6 Saha, R., "Effects of the Substrate on the Determination of Thin Film Mechanical Properties by Nanoindentation" 50 (50): 23-38, 2002

      7 Robertson, J., "Diamond-like Amorphous Carbon" 37 (37): 129-281, 2002

      8 Abe, H., "Developments of Plasma Etching Technology for Fabricating Semiconductor Devices" 47 (47): 1435-1455, 2008

      9 Mutsukura, N., "Deposition Mechanism of Hydrogenated Hardcarbon Films in a CH4 RF Discharge Plasma" 72 (72): 43-53, 1992

      10 Lee, S., "Comparative Study on the Properties of Amorphous Carbon Layers Deposited from 1-Hexene and Propylene for Dry Etch Hard Mask Application in Semiconductor Device Manufacturing" 519 (519): 6683-6687, 2011

      1 조일형, "실험계획법중 Box-Behnken(박스-벤켄)법을 이용한 반응성 염료의 광촉매 산화조건 특성 해석 및 최적화" 대한환경공학회 28 (28): 917-925, 2006

      2 정선호, "그래핀 옥사이드/카르복실화한 스티렌-부타디엔 고무 나노 복합체에 관한 연구" 한국반도체디스플레이기술학회 16 (16): 52-58, 2017

      3 Koidl, P., "Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films" 52 : 41-70, 1991

      4 Peng, X.L., "Mechanical Stability of DLC Films on Metallic Substrates: Part I-Film Structure and Residual Stress Levels" 312 (312): 207-218, 1998

      5 Chun, H., "Hydrocarbon Plasma of a Low-Pressure Arc Discharge for Deposition of Highly-Adhesive Hydrogenated DLC films" 2 (2): 1-5, 2003

      6 Saha, R., "Effects of the Substrate on the Determination of Thin Film Mechanical Properties by Nanoindentation" 50 (50): 23-38, 2002

      7 Robertson, J., "Diamond-like Amorphous Carbon" 37 (37): 129-281, 2002

      8 Abe, H., "Developments of Plasma Etching Technology for Fabricating Semiconductor Devices" 47 (47): 1435-1455, 2008

      9 Mutsukura, N., "Deposition Mechanism of Hydrogenated Hardcarbon Films in a CH4 RF Discharge Plasma" 72 (72): 43-53, 1992

      10 Lee, S., "Comparative Study on the Properties of Amorphous Carbon Layers Deposited from 1-Hexene and Propylene for Dry Etch Hard Mask Application in Semiconductor Device Manufacturing" 519 (519): 6683-6687, 2011

      11 김민석, "BTMSM/O₂ 고유량으로 증착된 low-k SiOCH 박막의 전기적인 특성" 한국반도체디스플레이기술학회 7 (7): 41-45, 2008

      12 Manage, D. P., "Atmospheric Aging and Thermal Annealing Effects in a-C:H Thin Films" 270 (270): 247-254, 2000

      13 Horn, T. D., "Amorphous Carbon Hard Mask for Multiple Patterning Lithography" 21 (21): 2015

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2027 평가예정 재인증평가 신청대상 (재인증)
      2021-01-01 평가 등재학술지 유지 (재인증) KCI등재
      2019-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2016-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2012-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2010-03-25 학회명변경 한글명 : 한국반도체및디스플레이장비학회 -> 한국반도체디스플레이기술학회
      영문명 : The Korean Society of Semiconductor & Display Equipment Technology -> The Korean Society of Semiconductor & Display Technology
      KCI등재
      2010-03-25 학술지명변경 한글명 : 반도체및디스플레이장비학회지 -> 반도체디스플레이기술학회지
      외국어명 : Journal of the Semiconductor and Display Equipment Technology -> Journal of the Semiconductor & Display Technology
      KCI등재
      2009-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2008-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2006-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.29 0.29 0.26
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.21 0.18 0.217 0.02
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