산소가스 유량에 따른 WOx 박막의 가역적 저항 변화 특성 연구 = A Study on Reversible Resistive Switching in WOx Film by Oxygen Gas Flow Rate

다국어 초록 (Multilingual Abstract)

We investigated the electrical properties of Al/WOx/Pt thin fils which were prepared by RF-sputtering method at room temperature. The WOx films were deposited at a different oxygen partial pressure. The Al/WOx /Pt structures exhibited bipolar resistive switching. We investigated the basic switching properties, such as a retention and an endurance, which are essential for applications of non-volatile memory devices. We found that the oxygen pressure affects resistive switching behaviors considerably. The sample grown under O2(24sccm)+Ar(6sccm)gas shows optimized endurance and retention.

목차 (Table of Contents)

• 1. 서론 1
• 2. 이론적 배경 4
• 2.1 저항 스위칭 현상의 특성 4
• 2.2 제시된 저항변화 메카니즘 6
• 2.2.1 Conducting Filaments Mode 6
• 2.2.2 Ionic Memory 9
• 2.2.3 Electronic Effects Memory 12
• 3. 실험 및 측정 13
• 3.1 실험 방법 13
• 3.1.1 RF-sputter 장치 13
• 3.1.2 ReRAM 구조 박막의 증착 15
• 3.2 분석 및 측정 18
• 3.2.1 재료 분석 18
• 3.2.2 전기적 분석 18
• 3.2.3 전류 전압 측정 19
• 4. 결과 및 고찰 20
• 4.1 산소 분압에 따른 WOx 박막의 구조적 특성 20
• 4.2 산소 분압에 따른 WOx 박막의 전기적 특성 22
• 4.2.1 산소 분압에 따른 WOx 박막의 I-V 특성 22
• 4.2.2 산소 분압에 따른 WOx 박막의 switching voltage 25
• 4.2.3 산소 분압에 따른 WOx endurance, retention 특성 27
• 5. 결론 30
• REFERENCES 31