<P>We demonstrated the effect of the hydrophobicity of a gate insulator on the bias stress in a solution-processed organic thin-film transistor (OTFT). Without changing the surface morphology, only the hydrophobicity of the gate insulator was sy...
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https://www.riss.kr/link?id=A107642181
2016
-
학술저널
8618-8621(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We demonstrated the effect of the hydrophobicity of a gate insulator on the bias stress in a solution-processed organic thin-film transistor (OTFT). Without changing the surface morphology, only the hydrophobicity of the gate insulator was sy...
<P>We demonstrated the effect of the hydrophobicity of a gate insulator on the bias stress in a solution-processed organic thin-film transistor (OTFT). Without changing the surface morphology, only the hydrophobicity of the gate insulator was systematically tailored to achieve the electrical stability of the OTFT against the bias stress. The shift of the threshold voltage (V-TH) by the gate bias stress was found to decrease with increasing the hydrophobicity of the gate insulator. The shift of V-TH in the optimized OTFT was as small as -1.09 V under the gate bias stress for 1000 s.</P>
Magnetic Adsorbents Embedded in Hydrogel Bead for Surface Decontamination