가시광 InGaAsP/GaAs 결정성장을 위한 상평형도 해석 = An Analysis of the Phase Diagram fo the Crystal Growth of InGaAsP/GaAs in the Visible Region

다국어 초록 (Multilingual Abstract)

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.