<P> We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increa...
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https://www.riss.kr/link?id=A107483537
2015
-
SCI,SCIE,SCOPUS
학술저널
1362-1364(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P> We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increa...
<P> We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increased, 10<SUP>4</SUP>∼10<SUP>5</SUP> times, between 5 and 100 K, which were 100 times larger than that of the commercial Ge resistance temperature device (RTD). The large variation of electrical resistance at low temperature arises from decreased carrier density and mobility at low temperature. The mobility reduction at low temperature might be caused by ionized impurity scattering. </P>
Improvement of Riser Efficiency Using High-Intensity Ultrasonic Treatment in A356 Alloy