반강자성체 NiO 층 기반 단일 구조 및 이중 구조형 거대자기저항-스핀밸브 다층박막의 자기저항 특성 비교

다국어 초록 (Multilingual Abstract)

GMR-SV (giant magnetoresistance-spin valve) multilayer films were fabricated on rf- and dc-magnetron sputtering systems in four different forms, in which NiO thin films were inserted into the bottom, top and middle layers. The magnetic properties of all thin film samples were investigated from the major and minor magnetoresistance curves measured at room temperature and at 77 K. The exchange coupling field (Hex) and coercivity (Hc) of the pinned NiFe layer, the Hc and interlayer coupling field (Hint), magnetoresistance ratio (MR (%)), and magnetic sensitivity (MS) of the free NiFe layer in the single-type GMR-SV multilayer with the inserted NiO layer thickness of 10 nm were 110 Oe, 115 Oe, 4.5 Oe, 6.0 Oe, 7.1%, and 1.0%/Oe, respectively. The hysteresis curves of the two free layers with the NiO thin film inserted into the middle layer formed a stable squareness ratio, which was 9.5% for the MRs of 3.5% and 6.0%, and 2.2%/Oe for the MS due to the specular and spin dependent scattering effects. On the other hand, the Hc and MS of the single structure of the bottom NiO film inserted and the dual-type GMR-SV multilayer of the bottom and top layers were greatly increased and decreased, respectively. The MRs of the GMR-SV multilayers with the magnetization of spin array configuration of the pinned layer, which is a ferromagnetic material, and the free layer are antiparallel to each other. The MR of dual-type GMR-SV multilayer showed the maximum value when the spin arrays of magnetization configuration of the pinned and free layers, is antiparallel to each other.

참고문헌 (Reference)

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