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RISS 인기검색어

Effect of high electronic energy loss of 100MeV gold heavy ions in copper chalcogenides (CuX, X=S, Se) at nanoscale: Opto-electronic properties study

한글로보기

https://www.riss.kr/link?id=A107592139

저자

Sharma, R. ; Sagade, A.A. ; Gosavi, S.R. ; Gudage, Y.G. ; Ghosh, A. ; Kulariya, P. ; Sulaniya, I. ; Mane, R.S. ; Han, S.H.
발행기관
North-Holland
학술지명
Journal of non-crystalline solids
권호사항

Vol.355 No.31 [2009]
발행연도
2009
작성언어
-
주제어

[pacs] 61.05.-a ; [pacs] 61.46.-w ; [pacs] 61.66.Fn ; [pacs] 61.80.-x ; [pacs] 61.82.Fk ; Chalcogenides ; Optical spectroscopy ; Radiation
등재정보
SCI,SCIE,SCOPUS
자료형태
학술저널
수록면

1653-1658(6쪽)
제공처
ScienceON
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다국어 초록 (Multilingual Abstract)

The copper chalcogenide (CuX, X=S, Se) thin films have been irradiated with 100MeV gold swift heavy ions (SHI) at 1011 and 1012 ions/cm2 fluences. The irradiation effects were probed by characterizing physical properties such as XRD, AFM, optical band gap and electrical resistivity of copper chalcogenide thin films. The increase in irradiation fluence increases the particle size, electrical conductivity and PL intensity of the materials, and the optical band edges were red shifted. The results are explained by quantifying electronic energy loss of ions in both the materials.

번역하기

The copper chalcogenide (CuX, X=S, Se) thin films have been irradiated with 100MeV gold swift heavy ions (SHI) at 1011 and 1012 ions/cm2 fluences. The irradiation effects were probed...

The copper chalcogenide (CuX, X=S, Se) thin films have been irradiated with 100MeV gold swift heavy ions (SHI) at 1011 and 1012 ions/cm2 fluences. The irradiation effects were probed by characterizing physical properties such as XRD, AFM, optical band gap and electrical resistivity of copper chalcogenide thin films. The increase in irradiation fluence increases the particle size, electrical conductivity and PL intensity of the materials, and the optical band edges were red shifted. The results are explained by quantifying electronic energy loss of ions in both the materials.