ALD ZnO 버퍼층 증착 온도가 전착 Cu2O 박막 태양전지 소자 특성에 미치는 영향|RISS 상세보기

다국어 초록 (Multilingual Abstract)

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. Cu2O, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility (100 cm2/Vs). In spite of these various advantages, the efficiency of Cu2O based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of Cu2O solar cells can be the formation of CuO layer due to atmospheric surface oxidation of Cu2O absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on Cu2O surface. First, Cu2O absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between 80°C to 140°C. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on Cu2O based solar cells by J-V and XPS measurements.

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참고문헌 (Reference)

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