표동-확산의 양자역학적 효과를 고려한 10 nm 급 다결정 실리콘 채널 무접합 전계효과 트랜지스터의 설계 = Design of 10-nm-Level Junctionless Field-Effect Transistor with Poly-Si Channel under Quantum Mechanical Effects in Drift and Diffusion

다국어 초록 (Multilingual Abstract)

In this work, a junctionless field-effect transistor in the FinFET structure (JL FinFET) having poly-Si channel has been designed and characterized for 10-nm-and-beyond technology node. Replacing silicon-on-insulator (SOI) by bulk Si substrate featuring deposited oxide and poly-Si would warrant highly cost-effective process integration. It is demonstrated from the device simulation results with higher accuracy and credibility aided by multiple models including quantum mechanical models in drift diffusion that the poly-Si JL FinFET has the strong potential for 10-nm-and-beyond Si CMOS technology with little deviation in comparison with the JL FinFET with crystalline Si channel.

목차 (Table of Contents)

• Abstract
• I. 서론
• II. 설계 방법(Design Approach)
• Ⅲ. 시뮬레이션 결과(Simulation Results)
• Ⅳ. 결론
• 참고문헌