Warren-Averbach Analysis of Coherent Domain Size in PbZr0.2Ti0.8O3 Thin Films

다국어 초록 (Multilingual Abstract)

We have analyzed the microstructure of epitaxial PbZr0:2Ti0:8O3(PZT) thin lms by using the Warren-Averbach method. Epitaxial lms of PZT with thicknesses of 30 { 97 nm were prepared on Nb:STO(100) substrates by using an off-axis RF magnetron sputtering method. The surface roughness of the thin films was studied by using atomic force microscopy (AFM) and was found to be less than one perovskite lattice unit cell (4 A), showing excellent surface morphology.
Reciprocal space mapping techniques were employed to study the pseudo in-plane diffraction structure of the thin films. We found that the lattice constant c (out of plane) decreased from 4.154 A to 4.136 A and the lattice constant a (in-plane) increased from 3.934 A to 3.943 A with increasing thickness of the PZT thin films, showing clear structural evidence of a strain relaxation process. The coherent domain size, the root-mean-square microstrain, and the orientational spread will be presented as functions of the film thickness.

참고문헌 (Reference)

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