CMP thickness is the one of the key factors deciding electrical properties in the Integrated circuit devices because of its trend forward multi layer thin film structure. And, also current trend of manufacturing company is moving more forward cost sav...
CMP thickness is the one of the key factors deciding electrical properties in the Integrated circuit devices because of its trend forward multi layer thin film structure. And, also current trend of manufacturing company is moving more forward cost saving and productivity improvement than any time in the past. So, its control method need to be continuously improved with more efficiency in terms of cost and quality.The purpose of this study was to find the way to control the dielectric thickness after CMP process in the IMD layer which was usually controlled using by APC(Advanced process control) system. In previous version, APC system caused a lot of cost, materials and low productivity because its logic was based on the non patterned pilot wafer for calculating polish time. So we tried to find out the model which could be used just with pattern wafer. For pattern monitoring APC, many parameters, such as VRR(virtual removal rate), polish time, consumable count, should be studied to improve the rework rate, and new parameters like VRR(virtual removal rate), time coefficient, need to be introdued as well. Statistical approach was applied during deriving regression formula in the way of building logics of new APC. As a result, objectivity and reliability could be improved in the newly introduced APC system.