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    KCI등재 SCOPUS SCIE

    Enhancement of Dye-sensitized Solar Cells Efficiency Using Graphene Quantum Dots as Photoanode

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    https://www.riss.kr/link?id=A106157428

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    다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

    Dye-sensitized solar cell (DSSC) is a candidate to substitute conventional photovoltaic devices due to efficiency, cost in comparison with silicon devices. In this report, graphene quantum dots have attracted considerable potential merit for the development of photo-electrodes of dye-sensitized photovoltaic cells. The incorporation of graphene quantum dots into DSSCs photo-electrodes induced lower recombination, enhanced electron transport, increased light scattering. The conventional semiconductor quantum dots usually has surface defect and instable. To overcome such limitations, we have developed a hydrothermal synthesis process fabricating graphene quantum dots (GQD) with strong visible range emission. The reduced GOs graphene oxide (RGO) underwent sonication, heating, filtering, and dialysis producing GQD. Various sizes of GQDs with circular shape determined using scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence were successfully fabricated. In addition, the impedance nyquist plot, the electron transport resistance was smallest and the incident photo to charge carrier efficiency (IPCE) was the maximum when the size of graphene quantum dots (5 nm) was used. Thus, the GQD with unique optical and structural properties can be a very attractive candidate for dye-sensitized solar cells, optoelectronics, active layer of display, and bio-imaging devices.
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    Dye-sensitized solar cell (DSSC) is a candidate to substitute conventional photovoltaic devices due to efficiency, cost in comparison with silicon devices. In this report, graphene quantum dots have attracted considerable potential merit for the devel...

    Dye-sensitized solar cell (DSSC) is a candidate to substitute conventional photovoltaic devices due to efficiency, cost in comparison with silicon devices. In this report, graphene quantum dots have attracted considerable potential merit for the development of photo-electrodes of dye-sensitized photovoltaic cells. The incorporation of graphene quantum dots into DSSCs photo-electrodes induced lower recombination, enhanced electron transport, increased light scattering. The conventional semiconductor quantum dots usually has surface defect and instable. To overcome such limitations, we have developed a hydrothermal synthesis process fabricating graphene quantum dots (GQD) with strong visible range emission. The reduced GOs graphene oxide (RGO) underwent sonication, heating, filtering, and dialysis producing GQD. Various sizes of GQDs with circular shape determined using scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence were successfully fabricated. In addition, the impedance nyquist plot, the electron transport resistance was smallest and the incident photo to charge carrier efficiency (IPCE) was the maximum when the size of graphene quantum dots (5 nm) was used. Thus, the GQD with unique optical and structural properties can be a very attractive candidate for dye-sensitized solar cells, optoelectronics, active layer of display, and bio-imaging devices.

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    참고문헌 (Reference)

    1 C. d. Donegá, 40 : 1512-, 2011

    2 S. Stankovich, 45 : 1-, 2007

    3 R. Rossetti, 86 : 4470-, 1982

    4 S. V. Gaponenko, Cambridge University Press 97-, 2010

    5 V. I. Klimov, 58 : 635-, 2007

    6 Y. Zhu, 22 : 3906-, 2010

    7 X. Wu, 31 : 4676-, 2013

    8 F. Bonaccorso, 4 : 611-, 2010

    9 S. Kim, 6 : 8203-, 2012

    10 Y. Xu, 130 : 5856-, 2008

    1 C. d. Donegá, 40 : 1512-, 2011

    2 S. Stankovich, 45 : 1-, 2007

    3 R. Rossetti, 86 : 4470-, 1982

    4 S. V. Gaponenko, Cambridge University Press 97-, 2010

    5 V. I. Klimov, 58 : 635-, 2007

    6 Y. Zhu, 22 : 3906-, 2010

    7 X. Wu, 31 : 4676-, 2013

    8 F. Bonaccorso, 4 : 611-, 2010

    9 S. Kim, 6 : 8203-, 2012

    10 Y. Xu, 130 : 5856-, 2008

    11 D. Pan, 21 : 3136-, 2009

    12 L. B. Biedermann, 79 : 125411-, 2009

    13 D. Pan, 22 : 734-, 2010

    14 J. Peng, 12 : 844-, 2012

    15 Z. Z. Zhang, 77 : 235411-, 2008

    16 A. D. Güçlü, 82 : 155445-, 2010

    17 W. T. Liu, 82 : 081408-, 2010

    18 C. H. Lui, 105 : 127404-, 2010

    19 C. F. Chen, 471 : 617-, 2011

    20 Y. Li, 119 : 24950-, 2015

    21 L. Tang, 6 : 5102-, 2012

    22 S. Zhu, 47 : 6858-, 2011

    23 Y. Dong, 50 : 4738-, 2012

    24 G. Chen, 11 : 5296-, 2015

    25 R. Liu, 133 : 15221-, 2011

    26 K. L. Schroeder, 33 : 2337-, 2016

    27 Q. Zhuang, 31 : 746-, 2016

    28 T. Gao, 9 : 24846-, 2017

    29 R. Gokhale, 31 : 433-, 2014

    30 C. Wu, 2 : 1613-, 2013

    31 J. Kim, 8 : 4190-, 2014

    32 S. Bian, 242 : 231-, 2017

    33 T. Alizadeh, 96 : 763-, 2016

    34 V. V. Chaban, 7 : 17055-, 2015

    35 T. Yoon, 10 : 1539-, 2016

    36 S. W. Hwang, 105 : 127403-, 2010

    37 Q. Shen, 499 : 299-, 2006

    38 H. Hu, 257 : 2637-, 2011

    39 J. Wu, 256 : 2826-, 2012

    40 X. Wang, 8 : 323-, 2008

    41 A. P. Alivisatos, 100 : 13226-, 1996

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    학술지 이력

    학술지 이력
    연월일 이력구분 이력상세 등재구분
    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
    2008-01-01 등재 SCI 등재 (기타) KCI등재
    2006-01-01 등재 등재학술지 유지 (등재유지) KCI등재
    2004-01-01 등재 등재학술지 유지 (등재유지) KCI등재
    2001-07-01 등재 등재학술지 선정 (등재후보2차) KCI등재
    1998-01-01 등재 등재후보학술지 선정 (신규평가) KCI등재후보
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    학술지 인용정보

    학술지 인용정보
    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.58 0.11 0.38
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.28 0.23 0.213 0.04
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