니켈 실리사이드의 상에 따른 전자구조가 Auger 스펙트럼에 미치는 효과 = Phase Effect of the Electronic Structure of Ni-Silicide on the Auger Line Shape

다국어 초록 (Multilingual Abstract)

Nickel silicides were grown on Si(111) substrate by annealing Ni(400Å)/Si(111) samples at temperatures ranging from RT to 750℃ in ultra high vacuum. The Auger spectra taken from samples during annealing showed that the critical temperature for Ni diffusion in Si(111) substrates was ∼157℃, but no phases of nickel silicide were detected at this temperature range. The observed phases were identified as Ni₂Si(∼250℃), NiSi(∼450℃), and NiSi₂(∼750℃) by both analyzing the line shape of Auger spectra and calculating the atomic concentration of Ni and Si using modified Auger sensitivity factors. The fine structures observed at the Ni MMM and Si L_2.3VV spectra could be understood as reflecting the partial density of states of Ni d and Si p orbitals and were closely related with the chemical environments produced by the charge transfer from Ni to Si atoms.