RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      HSS STI-CMP적용을 위한이중 패드의 최적화 = Optimization of Double Pad for HSS STI-CMP Applications

      한글로보기

      https://www.riss.kr/link?id=A75006148

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract)

      As the device geometry shrinks to the deep submicron region, chemical mechanical polishing(CMP) planarization become a more
      essential technique of advanced ULSI process. Also, CMP process was required for the global planarization of inter-metal
      dielectric(IMD), inter-level dielectric(ILD) layers and interconnections with free-defect. Especially, the complete global
      planarization of IMD, ILD and interconnections can be achieved only with the CMP process. However, as the IMD and ILD layer
      gets thinner, several problems were found in the CMP process. It does have various problems such as dishing effect, torn
      oxide defects and nitride residues in oxide. So, it leads to severe circuit failure, which affects yield.
      In this paper, we studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization
      of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft
      and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the
      defect level has shown little difference, however, the counts of scratch was defected less than 2 on JR111 pad. Through
      the above result, we can select optimum polishing pad, so we can expect the improvement of throughput and device yield.
      번역하기

      As the device geometry shrinks to the deep submicron region, chemical mechanical polishing(CMP) planarization become a more essential technique of advanced ULSI process. Also, CMP process was required for the global planarization of inter-metal diel...

      As the device geometry shrinks to the deep submicron region, chemical mechanical polishing(CMP) planarization become a more
      essential technique of advanced ULSI process. Also, CMP process was required for the global planarization of inter-metal
      dielectric(IMD), inter-level dielectric(ILD) layers and interconnections with free-defect. Especially, the complete global
      planarization of IMD, ILD and interconnections can be achieved only with the CMP process. However, as the IMD and ILD layer
      gets thinner, several problems were found in the CMP process. It does have various problems such as dishing effect, torn
      oxide defects and nitride residues in oxide. So, it leads to severe circuit failure, which affects yield.
      In this paper, we studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization
      of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft
      and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the
      defect level has shown little difference, however, the counts of scratch was defected less than 2 on JR111 pad. Through
      the above result, we can select optimum polishing pad, so we can expect the improvement of throughput and device yield.

      더보기

      목차 (Table of Contents)

      • 목차
      • 1. 서론 = 336
      • 2. 실험 = 337
      • 3. 결과 및 고찰 = 342
      • 3.1 각 패드와 박막간의 연마 선택비 고찰 = 342
      • 목차
      • 1. 서론 = 336
      • 2. 실험 = 337
      • 3. 결과 및 고찰 = 342
      • 3.1 각 패드와 박막간의 연마 선택비 고찰 = 342
      • 3.2 새로운 연마 패드 상에서의 웨이퍼 연마율 특성 = 343
      • 3.3 각 패드에서 연마 후 산화막의 결함 및 스크래치 분포 = 345
      • 3.4 각 패드의 패턴 웨이퍼에서 연마 특성 = 347
      • 4. 결론 = 349
      • 감사의 글 = 349
      • 참고문헌 = 350
      더보기

      동일학술지(권/호) 다른 논문

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼