- Abstract
- Ⅰ. INTRODUCTION
- Ⅱ. EXPERIMENTS
- Ⅲ. RESULTS AND DISCUSSION
- Ⅳ. CONCLUSION
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https://www.riss.kr/link?id=A105085167
2002
English
SCIE,SCOPUS,KCI등재
학술저널
180-184(5쪽)
0
상세조회0
다운로드목차 (Table of Contents)
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Virtual ground monitoring for high fault coverage of linear analog circuits
Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell