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      SCOPUS KCI등재

      나노크기 표면 요철을 이용한 GaN LED의 광추출효율 향상 = Enhancement of Light Extraction Efficiency of GaN Light Emitting Diodes Using Nanoscale Surface Corrugation

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      https://www.riss.kr/link?id=A105149097

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      다국어 초록 (Multilingual Abstract)

      In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.
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      In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugation...

      In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.

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      참고문헌 (Reference)

      1 E. F. Schubert, 308 : 1274-, 2005

      2 O. Ambacher, 37 : 745-, 1998

      3 I. Schnitzer, 62 (62): 131-, 1993

      4 M. R. Krames, 3 (3): 160-, 2007

      5 H. -H. Park, 21 : 657-, 2011

      6 H. -H. Park, 20 : 1921-, 2010

      7 X. Sheng, 19 : A701-, 2011

      8 M. R. Krames, 75 : 2365-, 1999

      9 I. Schnitzer, 63 : 2174-, 1993

      10 K. Tadatomo, 40 : L583-, 2001

      1 E. F. Schubert, 308 : 1274-, 2005

      2 O. Ambacher, 37 : 745-, 1998

      3 I. Schnitzer, 62 (62): 131-, 1993

      4 M. R. Krames, 3 (3): 160-, 2007

      5 H. -H. Park, 21 : 657-, 2011

      6 H. -H. Park, 20 : 1921-, 2010

      7 X. Sheng, 19 : A701-, 2011

      8 M. R. Krames, 75 : 2365-, 1999

      9 I. Schnitzer, 63 : 2174-, 1993

      10 K. Tadatomo, 40 : L583-, 2001

      11 J. -Y. Kim, 91 : 181109-, 2007

      12 J. Zhong, 90 : 203515-, 2007

      13 S. Kim, 20 : A713-, 2012

      14 백광선, "나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선" 한국재료학회 21 (21): 273-276, 2011

      15 E. F. Schubert, "Light Emitting Diodes, 2nd ed" Cambridge University Press 86-, 2006

      16 "FDTD solutions on the Web"

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2014-03-01 평가 SCOPUS 등재 (기타) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1999-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.15 0.15 0.14
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.14 0.13 0.255 0.03
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