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    Metal 용 CMP 장비 및 핵심 공정기술에 관한 연구 = Studies on Techonologies for Metal CMP system and their core-processes

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    https://www.riss.kr/link?id=A348998

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    다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

    Although a CMP (Chemical Mechanical Polishing) system has problems that the system needs large space in a clean room, and that the cost of owner of the system is considerably high, and that throughput of the system is fairly low, the application of the CMP technology in fabrication of memory and non-memory integrated circuits is positively considered in some of the major IC makers in the world.
    In spite of such a bright future of the system, it is, in general, known that the tighter 3% uniformity in fabrication of a 1Gb DRAM is required using a CMP system.
    Therefore, one of the major purpose is trying to improve such problems described above such that the metal CMP system developed through this studies will be used for the fabrication of the complicated integrated circuits for the next generation in the field.
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    Although a CMP (Chemical Mechanical Polishing) system has problems that the system needs large space in a clean room, and that the cost of owner of the system is considerably high, and that throughput of the system is fairly low, the application of th...

    Although a CMP (Chemical Mechanical Polishing) system has problems that the system needs large space in a clean room, and that the cost of owner of the system is considerably high, and that throughput of the system is fairly low, the application of the CMP technology in fabrication of memory and non-memory integrated circuits is positively considered in some of the major IC makers in the world.
    In spite of such a bright future of the system, it is, in general, known that the tighter 3% uniformity in fabrication of a 1Gb DRAM is required using a CMP system.
    Therefore, one of the major purpose is trying to improve such problems described above such that the metal CMP system developed through this studies will be used for the fabrication of the complicated integrated circuits for the next generation in the field.

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    목차 (Table of Contents)

    • Ⅰ. 서론
    • 1. CMP의 필요성
    • 2. Metal CMP의 메커니즘
    • Ⅱ. 핵심 공정기술
    • 1. CMP 적용 공정 분석
    • Ⅰ. 서론
    • 1. CMP의 필요성
    • 2. Metal CMP의 메커니즘
    • Ⅱ. 핵심 공정기술
    • 1. CMP 적용 공정 분석
    • 2. 핵심공정기술 연구
    • 2-1. 공정실험
    • 가. 공정 웨이퍼 준비
    • 나. 공정실험
    • 다. 리소그라피기술
    • 2-2. 측정결과
    • 가. Bull's Eye Effects
    • 나. Removal Rate
    • 다. Planarity
    • 라. Oscillation에 의한 Roughness
    • 마. 압력에 의한 Roaghness
    • Ⅲ. 결론
    • Ⅳ. 참고문헌
    • ㆍAbstracts
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