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      KCI등재 SCI SCIE SCOPUS

      Strong Luminescence and Easy Color Control for SiOx Thin Films by Using RF Magnetron Sputtering

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      https://www.riss.kr/link?id=A104321635

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      Silicon-rich silicon-oxide (SRSO) films were deposited at room temperature by using an RF magnetron sputtering method. The optical properties and the chemical state of these films were characterized by using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). We obtained light emissions of blue, yellow and red colors in the PL spectra by adjusting the power of the RF-generated plasma. Annealing the films at 1000 ℃ for 5 min, 10 min and 30 min, respectively, in an ultra-high-vacuum (UHV) chamber, we observed that the PL intensity was enhanced by 6 to 40 times that of the as-deposited sample. We also measured the core-level spectra of the related elements by using X-ray photoelectron spectroscopy (XPS). Investigating the chemical state change of the silicon 2p core-level, we found that the color variation and the light emission efficiency of the SRSO materials were strongly affected by the oxygen content embedded in the deposited lms. This means that the PL wavelength of the SRSO films can be readily controlled by RF plasma power tuning. In order to explain the PL enhancement after the thermal treatment in UHV, we discuss the luminescence origin being closely related to the formation of nano-crystals and of optically-active defect states.
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      Silicon-rich silicon-oxide (SRSO) films were deposited at room temperature by using an RF magnetron sputtering method. The optical properties and the chemical state of these films were characterized by using photoluminescence (PL) and X-ray photoelect...

      Silicon-rich silicon-oxide (SRSO) films were deposited at room temperature by using an RF magnetron sputtering method. The optical properties and the chemical state of these films were characterized by using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). We obtained light emissions of blue, yellow and red colors in the PL spectra by adjusting the power of the RF-generated plasma. Annealing the films at 1000 ℃ for 5 min, 10 min and 30 min, respectively, in an ultra-high-vacuum (UHV) chamber, we observed that the PL intensity was enhanced by 6 to 40 times that of the as-deposited sample. We also measured the core-level spectra of the related elements by using X-ray photoelectron spectroscopy (XPS). Investigating the chemical state change of the silicon 2p core-level, we found that the color variation and the light emission efficiency of the SRSO materials were strongly affected by the oxygen content embedded in the deposited lms. This means that the PL wavelength of the SRSO films can be readily controlled by RF plasma power tuning. In order to explain the PL enhancement after the thermal treatment in UHV, we discuss the luminescence origin being closely related to the formation of nano-crystals and of optically-active defect states.

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      참고문헌 (Reference)

      1 L. N. Skuja, 239 : 16-, 1998

      2 M. Zacharias, 80 : 661-, 2002

      3 R. Tohmon, 62 : 1388-, 1989

      4 H. Chen, 88 : 121921-, 2006

      5 X. Portier, 16 : 439-, 2003

      6 N.-M. Park, 78 : 2575-, 2001

      7 X. Yang, 86 : 201906-, 2005

      8 L. N. Skuja, 39 : 3909-, 1989

      9 C. Lin, 87 : 2808-, 2000

      10 L. Pavesi, 408 : 440-, 2000

      1 L. N. Skuja, 239 : 16-, 1998

      2 M. Zacharias, 80 : 661-, 2002

      3 R. Tohmon, 62 : 1388-, 1989

      4 H. Chen, 88 : 121921-, 2006

      5 X. Portier, 16 : 439-, 2003

      6 N.-M. Park, 78 : 2575-, 2001

      7 X. Yang, 86 : 201906-, 2005

      8 L. N. Skuja, 39 : 3909-, 1989

      9 C. Lin, 87 : 2808-, 2000

      10 L. Pavesi, 408 : 440-, 2000

      11 S. M. Prokes, 49 : 2238-, 1994

      12 L. T. Chaham, 57 : 1046-, 1990

      13 S. Ogut, 79 : 1770-, 1997

      14 G. Allan, 78 : 3161-, 1977

      15 B. Delley, 67 : 2370-, 1995

      16 M.-G. Kim, 38 : 750-, 2001

      17 G. F. Grom, 407 : 358-, 2000

      18 K. H. Park, 39 : 283-, 2001

      19 N.-M. Park, 78 : 2575-, 2001

      20 H. Z. Song, 55 : 6988-, 1977

      21 M. V. Wolkin, 82 : 197-, 1999

      22 T.-Y Kim, 85 : 5355-, 2004

      23 P. D. J. Calcott, 5 : L91-, 1993

      24 K. S. Min, 69 : 2033-, 1996

      25 Jun-Sung Bae, "Visible photoluminescence from Si nanocrystals in Si/SiO2 multilayers grown by ion beam sputtering" 한국물리학회 43 (43): 557-560, 2003

      26 Young Ju Park, "Optical properties of multilayer SiNx/SiNy structures prepared by plasma enhanced chemical vapor deposition" 한국물리학회 44 (44): 700-5, 2004

      27 D. J. Lockwood, "Light Emission in Silicon: From Physics to Devices" Academic Press 1998

      28 Moon-Seung Yang, "Effect of Surface Passivants on the Photoluminescence from Si Nanocrystals" 한국물리학회 48 (48): 1291-1296, 2006

      29 Changhun Ko, "Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films" 한국물리학회 48 (48): 1277-1280, 2006

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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