Synthesis and Influence of Annealing Atmosphere on the Luminescence Properties of ZnGa2O4 Nanowires

다국어 초록 (Multilingual Abstract)

ZnGa2O4 nanowires were synthesized on Si substrates by using the thermal evaporation of amixture of Zn and GaN powders. Scanning electron microscopy showed that the diameters andthe lengths of the nanowires ranged from a few tens to a few hundreds of nanometers and upto a few hundreds of micrometers, respectively. The ZnGa2O4 nanowires were found to have aface-centered cubic-structured monocrystalline phase. The photoluminescence properties of theZnGa2O4 nanowires appeared to depend strongly on the annealing atmosphere. The ZnGa2O4nanowires annealed in a hydrogen atmosphere showed a relatively weak broad visible emissionband, ranging from 500 to 700 nm. In contrast, the ZnGa2O4 nanowires annealed in an oxygenatmosphere showed a relatively strong near-ultraviolet emission band centered at approximately380 nm. On the other hand, the ZnGa2O4 nanowires annealed in an argon atmosphere showed asharp, taller ultraviolet emission peak centered at approximately 380 nm, as well as a broad greenemission band centered at approximately 510 nm. The origins of the enhanced luminescence inZnGa2O4 nanowires due to annealing in different atmospheres are discussed.

참고문헌 (Reference)

1 Z. W. Pan., 291 : 1947-, 2001

2 H. Naito., 26 : 997-, 2003

3 Q. Shi., 149 : 82-, 2008

4 M. Yu., 56 : 1007-, 2002

5 S. Seo., 129 : 307-, 2009

6 F. Gu., 25 : 59-, 2004

7 S. K. Sampath., 11 : 3635-, 1999

8 M. Zawadzki., 323-324 : 279-, 2001

9 A. M. Morales., 279 : 208-, 1998

10 L. Xu., 7 : 810-, 2007

11 K. W. Chang., 109 : 13572-, 2005

12 J. S. Kim., 82 : 2029-, 2003

13 R. N. Bhargava., 72 : 416-, 1994

14 G. Allan., 76 : 2961-, 1996

15 C. M. Rao., 8 : 5776-, 2008