We report the growth of indium phosphide (InP) by using a chemical
beam epitaxy (CBE) technique with the group V source
tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The
photoluminescence spectra at 15 K showed that the intensity of a
peak att...
We report the growth of indium phosphide (InP) by using a chemical
beam epitaxy (CBE) technique with the group V source
tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The
photoluminescence spectra at 15 K showed that the intensity of a
peak attributed to impurity recombination and the FWHM increased
significantly when the cracker temperature exceed 545 $^\circ$C.
This paper also reports the growth of GaP without precracking of the
TBBDMAP source. While it was not possible to grow InP at 450
$^\circ$C, GaP was successfully grown at temperatures as low as 410
$^\circ$C, possibly due to the higher Ga-P bond strength which gives
a longer TBBDMAP residence time on the surface before desorption. In
this study, ethyldimethylindium (EDMIn) and triisopropylgallium
(TlPGa) were used as the indium (In) and the gallium (Ga) sources,
respectively.