$MgAl_{2}O_{4}$ 기판위에 GaN의 HVPE 성장조건에 따른 광루미네센스 특성 = Photoluminescence Properties of GaN on $MgAl_{2}O_{4}$ Substrate with HVPE Growth Conditions

다국어 초록 (Multilingual Abstract)

The photoluminescence (pL) characteristics of hydride vapor phase epiyaxy (HVPE) grown GaN films on $MgAl_{2}O_{4}$ substrate were investigated with several growth conditions. The GaN films on $MgAl_{2}O_{4}$ substrate is autodoped with Mg atoms which thermally out-diffused from substrate lead to a PL characteristics of impurity doped ones. The Mg-related emission band intensity decreased with growth temperature may due to the evaporation of Mg atoms at the GaN film surfaces. and it also decreased with GaN film thicknesses. We can estimate the diffusion coefficient of Mg atoms in GaN under the consideration of diffusion phenomena between two infinite solids lead to a value of D= 2$\times$$lO^{-10}\textrm{cm}^2/sec.