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      KCI우수등재 SCOPUS

      폴리이미드 패시베이션과 폴리비닐알콜 패시베이션 레이어 성막이 고성능 유기박막 트렌지스터에 주는 영향 = Effects of Polyimide Passivation Layers and polyvinylalcohol Passivation Layers for Organic Thin-Film Transistors(OTFTs)

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      https://www.riss.kr/link?id=A103590241

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      In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.
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      In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process w...

      In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.

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      참고문헌 (Reference)

      1 J. H. Shim, "Thin solid Film 441"

      2 S. W. Pyo, "Jpn. J. Appl" 44 (44): 2005

      3 Y. S. Yang, "Journal of the Korean Vacuum Society 15"

      4 S. H. Han, "Electrochem" 10 (10): 2007

      5 J. H. Na, "Appl. Phys" 90 (90): 2007

      6 S. H. Han, "Appl. Phys" 88 (88): 2006

      7 D. Li, "Appl. Phys" 86 (86): 2005

      8 Y. Qiu, "Appl. Phys" 83 (83): 2003

      9 W. H. Lee, "Appl. Phys" 90 (90): 2007

      1 J. H. Shim, "Thin solid Film 441"

      2 S. W. Pyo, "Jpn. J. Appl" 44 (44): 2005

      3 Y. S. Yang, "Journal of the Korean Vacuum Society 15"

      4 S. H. Han, "Electrochem" 10 (10): 2007

      5 J. H. Na, "Appl. Phys" 90 (90): 2007

      6 S. H. Han, "Appl. Phys" 88 (88): 2006

      7 D. Li, "Appl. Phys" 86 (86): 2005

      8 Y. Qiu, "Appl. Phys" 83 (83): 2003

      9 W. H. Lee, "Appl. Phys" 90 (90): 2007

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      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 계속평가 신청대상 (등재유지)
      2017-01-01 평가 우수등재학술지 선정 (계속평가)
      2014-06-16 학술지명변경 한글명 : Applied Science and Convergence Technology -> 한국진공학회지 KCI등재
      2014-02-06 학술지명변경 한글명 : ASCT -> Applied Science and Convergence Technology KCI등재
      2014-02-05 학술지명변경 한글명 : 한국진공학회지 -> ASCT
      외국어명 : Journal of the Koren Vacuum Society -> Applied Science and Convergence Technology      		 KCI등재
      2014-01-01 학술지명변경 한글명 : 한국진공학회지 -> Applied Science and Convergence Technology KCI등재
      2013-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2010-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-05-23 학술지명변경 외국어명 : Journal of the Koren Cacuum Society -> Journal of the Koren Vacuum Society KCI등재
      2005-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2004-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2003-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.12 0.12 0.15
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.13 0.1 0.328 0.03
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