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      KCI등재 SCI SCIE SCOPUS

      Radiation Damage to a Charge-sensitive Amplifier for Life-span Estimation

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      https://www.riss.kr/link?id=A104337209

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      다국어 초록 (Multilingual Abstract)

      Life-span estimates for charge sensitive amplifiers (CSA) for radiation damage effect are essential to obtain the reliability of a radiation detector system in its radiation environments because a CSA and a radiation sensor are exposed to radiation simultaneously. A hybrid-type CSA was fabricated with electronic components, which are easily obtainable from commercial markets, and its performance was tested. To estimate its life-span, we exposed the CSA to high-dose gamma-rays up to 10^6 Gy. Then, the performance degradations of the fabricated CSA were measured by using the equivalent noise charge (ENC) at various irradiation dose rates. In this paper, the feasibility and radiation damage to the CSA are discussed for life-span estimates.
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      Life-span estimates for charge sensitive amplifiers (CSA) for radiation damage effect are essential to obtain the reliability of a radiation detector system in its radiation environments because a CSA and a radiation sensor are exposed to radiation si...

      Life-span estimates for charge sensitive amplifiers (CSA) for radiation damage effect are essential to obtain the reliability of a radiation detector system in its radiation environments because a CSA and a radiation sensor are exposed to radiation simultaneously. A hybrid-type CSA was fabricated with electronic components, which are easily obtainable from commercial markets, and its performance was tested. To estimate its life-span, we exposed the CSA to high-dose gamma-rays up to 10^6 Gy. Then, the performance degradations of the fabricated CSA were measured by using the equivalent noise charge (ENC) at various irradiation dose rates. In this paper, the feasibility and radiation damage to the CSA are discussed for life-span estimates.

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      참고문헌 (Reference)

      1 K. Mori, 4 : 50-, 1996

      2 C. C. Chen, NS-39 : 272-, 1992

      3 H. S. Kim, 35 : 2-, 2010

      4 T. H. Lee, 579 : 260-, 2007

      5 "ToshibaTM datasheet"

      6 G. C. Messenger, "The effects of Radiation on Electronic Systems" Van Nostrand Reinhold 1986

      7 "NECTM datasheet"

      8 T. P. Ma, "Ionizing Radiation Effects in MOS Devices and Circuits" Wiley & Sons 1989

      9 A. Holmes-Siedle, "Handbook of Radiation Effects" Oxford University Press 1993

      10 L. W. Ricketts, "Fundamentals of Nuclear Hardening of Electronic Equipment" Robert E. Krieger Publishing Company 1986

      1 K. Mori, 4 : 50-, 1996

      2 C. C. Chen, NS-39 : 272-, 1992

      3 H. S. Kim, 35 : 2-, 2010

      4 T. H. Lee, 579 : 260-, 2007

      5 "ToshibaTM datasheet"

      6 G. C. Messenger, "The effects of Radiation on Electronic Systems" Van Nostrand Reinhold 1986

      7 "NECTM datasheet"

      8 T. P. Ma, "Ionizing Radiation Effects in MOS Devices and Circuits" Wiley & Sons 1989

      9 A. Holmes-Siedle, "Handbook of Radiation Effects" Oxford University Press 1993

      10 L. W. Ricketts, "Fundamentals of Nuclear Hardening of Electronic Equipment" Robert E. Krieger Publishing Company 1986

      11 "Fairchild semiconductorTM datasheet"

      12 "Analog Devices Inc. datasheet"

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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