We have studied the feasibility of fabricating multi-level interconnects using air as an interlayer dielectric material. In particular, wefabricated dual damascene structures using the via-rst approach without etch stop layers required for trench form...
We have studied the feasibility of fabricating multi-level interconnects using air as an interlayer dielectric material. In particular, wefabricated dual damascene structures using the via-rst approach without etch stop layers required for trench formation, which opens upthe possibility of further lowering the eective dielectric constant. Dual damascene structures were formed by sequential deposition ofdium, vanadium pentoxide, and hydrogen peroxide was found suitable for the conventional silicon technology. Based on the ndings inthis study a novel process for the air gap formation was proposed, which may be applied even to the substrate level.