1 R. Ashokan, "Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy" 29 : 636-, 2000
2 P. Moskvin, "Thermodynamic description of CdXHg1XTe growth process by LPE" 354 : 4407-, 2008
3 G. J. Hails, J. E, "The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of(Hg,Cd)Te onto(100)GaAs substrates" 24 : 1149-, 1995
4 O. V. Shcheritsa, "Numerical study for diffusion processes in dissolution and growth of CdxHg1-xTe=CdTe heterostructures formed by LPE.Part II.Effect of programmed temperature changes" 290 : 357-, 2006
5 S.-H. Suh, "Metalorganic vapor phase epitaxial growth of hillock free(100)HgCdTe/GaAs with good electrical properties" 159 : 1132-, 1996
6 김진상, "MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상" 한국센서학회 12 (12): 7-, 2003
7 T. J. de Lyon, "MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays:A review of recent progress" 28 : 705-, 1999
8 K. D. Maranowski, "MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays" 30 : 619-, 2001
9 A.Rogalski, "HgCdTe infrared detector material:history,status and outlook" 68 : 2267-, 2005
10 김진상, "GaAs 및 CdZnTe 기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 특성" 12 : 171-, 2001
1 R. Ashokan, "Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy" 29 : 636-, 2000
2 P. Moskvin, "Thermodynamic description of CdXHg1XTe growth process by LPE" 354 : 4407-, 2008
3 G. J. Hails, J. E, "The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of(Hg,Cd)Te onto(100)GaAs substrates" 24 : 1149-, 1995
4 O. V. Shcheritsa, "Numerical study for diffusion processes in dissolution and growth of CdxHg1-xTe=CdTe heterostructures formed by LPE.Part II.Effect of programmed temperature changes" 290 : 357-, 2006
5 S.-H. Suh, "Metalorganic vapor phase epitaxial growth of hillock free(100)HgCdTe/GaAs with good electrical properties" 159 : 1132-, 1996
6 김진상, "MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상" 한국센서학회 12 (12): 7-, 2003
7 T. J. de Lyon, "MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays:A review of recent progress" 28 : 705-, 1999
8 K. D. Maranowski, "MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays" 30 : 619-, 2001
9 A.Rogalski, "HgCdTe infrared detector material:history,status and outlook" 68 : 2267-, 2005
10 김진상, "GaAs 및 CdZnTe 기판위에 MOVPE 법으로 성장된 HgCdTe 박막의 특성" 12 : 171-, 2001
11 W. J. Everson, "Etch pit characterization of CdTe and CdZnTe substrates for use in Mercury Cadmium Telluride epitaxy" 24 : 505-, 1995