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    Inhomogeneous Nucleation and Domain Wall Motion with Barkhausen Avalanches in Epitaxial PbZr0.4Ti0.6O3 Thin Films

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    https://www.riss.kr/link?id=A104102445

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    We investigated the ferroelectric (FE) domain nucleation and domain wall motion in epitaxial PbZr0.4Ti0.6O3 capacitors by using modified piezoresponse force microscopy with the domaintracing method. From time-dependent FE domain evolution images, we observed that defectmediated inhomogeneous nucleation occurred with a stochastic nature. In addition, we found that the number of nuclei N(t) was linearly proportional to log t, where t is the accumulated time of the applied pulse fields. The time-dependence of N(t) suggests a distribution of energy barriers for nucleation, which may determine the stochastic nature of domain nucleation. We also observed that the domain grew with consecutive Barkhausen avalanches and that the growth direction became anisotropic when the domain radius was larger than a critical radius of about 100 nm.
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    We investigated the ferroelectric (FE) domain nucleation and domain wall motion in epitaxial PbZr0.4Ti0.6O3 capacitors by using modified piezoresponse force microscopy with the domaintracing method. From time-dependent FE domain evolution images, we o...

    We investigated the ferroelectric (FE) domain nucleation and domain wall motion in epitaxial PbZr0.4Ti0.6O3 capacitors by using modified piezoresponse force microscopy with the domaintracing method. From time-dependent FE domain evolution images, we observed that defectmediated inhomogeneous nucleation occurred with a stochastic nature. In addition, we found that the number of nuclei N(t) was linearly proportional to log t, where t is the accumulated time of the applied pulse fields. The time-dependence of N(t) suggests a distribution of energy barriers for nucleation, which may determine the stochastic nature of domain nucleation. We also observed that the domain grew with consecutive Barkhausen avalanches and that the growth direction became anisotropic when the domain radius was larger than a critical radius of about 100 nm.

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    참고문헌 (Reference)

    1 M. Dawber, 77 : 1083-, 2005

    2 I. Horcas, 78 : 013705-, 2007

    3 R. W. Chantrell, 76 : 6407-, 1994

    4 E. V. Colla, 88 : 017601-, 2002

    5 A. Schwarz, 92 : 077206-, 2004

    6 K. S. Ryu, 3 : 547-, 2007

    7 P. Bak, 38 : 364-, 1988

    8 A. N. Kolmogorov, 3 : 355-, 1937

    9 M. Avrami, 7 : 1103-, 1939

    10 Y. Ishibashi, 31 : 506-, 1971

    1 M. Dawber, 77 : 1083-, 2005

    2 I. Horcas, 78 : 013705-, 2007

    3 R. W. Chantrell, 76 : 6407-, 1994

    4 E. V. Colla, 88 : 017601-, 2002

    5 A. Schwarz, 92 : 077206-, 2004

    6 K. S. Ryu, 3 : 547-, 2007

    7 P. Bak, 38 : 364-, 1988

    8 A. N. Kolmogorov, 3 : 355-, 1937

    9 M. Avrami, 7 : 1103-, 1939

    10 Y. Ishibashi, 31 : 506-, 1971

    11 Y. W. So, 86 : 092905-, 2005

    12 J. Y. Jo, 102 : 045701-, 2009

    13 A. K. Tagantsev, 66 : 214109-, 2002

    14 J. Y. Jo, 92 : 012917-, 2008

    15 A. Gruverman, 87 : 082902-, 2005

    16 S. M. Yang, 92 : 252901-, 2008

    17 D. J. Kim, 91 : 132903-, 2007

    18 D. J. Kim, 43 : 395403-, 2010

    19 S. M. Yang, 82 : 174125-, 2010

    20 J. F. Scott, 20 : 425222-, 2008

    21 H. Barkhausen, 20 : 401-, 1919

    22 J. P. Sethna, 410 : 242-, 2001

    23 양상모, "Scaling Behavior of Amplitude-dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr_(0.2)Ti_(0.8O3) Thin Film" 한국물리학회 58 (58): 599-603, 2011

    24 S. M. Yang, "Quantitative Analysis of the Nucleation and Growth of Ferroelectric Domains in Epitaxial Pb(Zr,Ti)O3 Thin Films" 한국물리학회 55 (55): 820-824, 2009

    25 M. E. Lines, "Principles and Applicationsof Ferroelectrics and Related Materials" Clarendon Press 1977

    26 T. H. Kim, "Polarization Switching Behaviors in Multiferroic BiFeO3(001) Thin Film Capacitors under In-plane Magnetic Field" 한국물리학회 56 (56): 503-507, 2010

    27 TaeKwon Song, "Phenomenological Calculation of the Domain-size-dependent Ferroelectric Domain-wall Velocity" 한국물리학회 55 (55): 618-621, 2009

    28 Sang Mo Yang, "Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors" 한국물리학회 11 (11): 1111-1125, 2011

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    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
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    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.47 0.15 0.31
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.26 0.2 0.26 0.03
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