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      게이트 절연막에 사용된 점착층에 대한 영향 = Effect of Adhesion Layer on Gate Insulator

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      https://www.riss.kr/link?id=A101055781

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      다국어 초록 (Multilingual Abstract)

      The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.
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      The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using pol...

      The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

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      참고문헌 (Reference)

      1 "Preparation and pervaporation performance of polyimide composite membrane by vapor deposition and polymerization" 136 : 121-, 1997.

      2 "Pentacene-based organic thin-film transistors" 44 : 1325-, 1997.

      3 "Organic thin-film transistors based on vapor- deposition polymerized gate insulators" 44 : 652-, 2005.

      4 "Organic thin-film transistors based on vapor- deposition polymerized gate insulators" 44 : 652-, 2005.

      5 "Organic thin film transistors with field effect mobility" 164-, 1999.

      6 "Organic smart pixels" 73 : 142-, 1998.

      7 "Materials requirements and fabrication of active matrix arrays of organic thin-film transistors for displays" 16 : 4509-, 2004.

      8 "Low-voltage organic transistors with an amorphous molecular gate dielectric" 431 : 963-, 2004.

      9 "Integration of vapor deposited polyimide into a multichip module packaging process" 20 : 13-, 1997.

      10 "IR studies of polyimides. I. Effects of chemical and physical changes during cure" 27 : 711-, 1989.

      1 "Preparation and pervaporation performance of polyimide composite membrane by vapor deposition and polymerization" 136 : 121-, 1997.

      2 "Pentacene-based organic thin-film transistors" 44 : 1325-, 1997.

      3 "Organic thin-film transistors based on vapor- deposition polymerized gate insulators" 44 : 652-, 2005.

      4 "Organic thin-film transistors based on vapor- deposition polymerized gate insulators" 44 : 652-, 2005.

      5 "Organic thin film transistors with field effect mobility" 164-, 1999.

      6 "Organic smart pixels" 73 : 142-, 1998.

      7 "Materials requirements and fabrication of active matrix arrays of organic thin-film transistors for displays" 16 : 4509-, 2004.

      8 "Low-voltage organic transistors with an amorphous molecular gate dielectric" 431 : 963-, 2004.

      9 "Integration of vapor deposited polyimide into a multichip module packaging process" 20 : 13-, 1997.

      10 "IR studies of polyimides. I. Effects of chemical and physical changes during cure" 27 : 711-, 1989.

      11 "All-organic integrated emissive pixels" 162-, 1999.

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2026 평가예정 재인증평가 신청대상 (재인증)
      2020-01-01 평가 등재학술지 유지 (재인증) KCI등재
      2017-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2013-01-01 평가 등재 1차 FAIL (등재유지) KCI등재
      2010-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-05-30 학회명변경 영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers KCI등재
      2004-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2001-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1998-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.13 0.13 0.13
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.14 0.14 0.247 0.06
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