Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2...
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https://www.riss.kr/link?id=A19639377
2002
Korean
505.000
학술저널
279-283(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2...
Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2 Torr. And the film were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ∼200 ℃, target-substrate distance of ∼14 ㎝ and sputtering pressure of 1.3∼1.7×10^-2 Torr. Also at that condition the most excellent adhesion was observed.
The Application of CFD for Ship Design
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