Growth of Cubic GaN on a Nitrided AlGaAs (001) Substrate by Using Hydried Vapor Phase Epitaxy

다국어 초록 (Multilingual Abstract)

GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy
(HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the
growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN
layer. Nitridation of the AlGaAs surface was performed in a NH3 atmosphere at a temperature
range of 550 . 700 C. GaN layers were grown at different growth rates on the nitrided AlGaAs
substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers
were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy
(XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence
(CL) and X-ray diffraction (XRD) were carried out.