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이 학술지의 논문 검색
The Role of Electron Tunneling in Pattern-Dependent Charging
Hwang, G. S.; Giapis, K. P. IEEJ 1997 p.1-8
Influence of Pulsed ECR Plasma on Gate Electrode Etching
Fujiwara, N.; Maruyama, T.; Miyatake, H. IEEJ 1997 p.9-14
The rf bias Effect on Electron Shading Damage and the Measurement of Damage Current
Hasegawa, A.; Shimpuku, F.; Hashimoto, K.; Nakamura, M. IEEJ 1997 p.15-20
Reduction of Charge Build up with Pulse Modulated Bias in Pulsed ECR Plasma
Maruyama, T.; Fujiwara, N.; Ogino, S.; Miyatake, H. IEEJ 1997 p.21-26
Effects of Pulse-Time Modulated Plasma for Precise Metal Etching
Otake, H.; Samukawa, S.; Oikawa, H.; Mashimoto, Y. IEEJ 1997 p.27-32
Soda, E.; Tokashiki, K.; Miyamoto, H. IEEJ 1997 p.33-38
WSi~2/Poly-Si Gate Etching Using a TiON Hard Mask
Tabara, S.; Hibino, S.; Nakaya, H. IEEJ 1997 p.39-44
Control of CD Shift in Metal Etching
Izawa, M.; Tachi, S.-I.; Hamazaki, R.; Yoshida, T. IEEJ 1997 p.45-50
Etching Characteristics of 0.1-�m-Level Patterns by Gaspuff Plasma Source
Ootera, H.; Taki, M.; Shintani, K.; Nishikawa, K. IEEJ 1997 p.51-56
Tuda, M.; Ono, K.; Tsuchihashi, M.; Hanazaki, M. IEEJ 1997 p.57-62