<P>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in chara...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107447135
-
2018
-
SCI,SCIE,SCOPUS
학술저널
3786-3790(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in chara...
<P>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.</P>
Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems
Modeling and System-Level Simulation for Nonideal Conductance Response of Synaptic Devices