1 강순구, "멤리스터의 모델링과 연상메모리(M_CAM) 회로 설계" 대한전자공학회 48 (48): 1-9, 2011
2 J. Borghetti, "‘Memristive’ switches enable ‘stateful’ logic operations via material implication" 464 : 873-876, 2010
3 D. B. Strukov, "The missing memristor found" 453 : 80-83, 2008
4 O. Kavehei, "The fourth element : characteristics, modelling, and electromagnetic theory of the memristor" 1-28, 2010
5 A. Shkabko, "The effects of switching time and SrTiO3−xNy nanostructures on the operation of Al/SrTiO3− xNy/Al memristors" 8 (8): 074508-, 2010
6 N. H. E. Weste, "Principles of CMOS VLSI Design: A systems perspective" Addison Wesley 1985
7 S. H. Jo, "Nanoscale memristor device as synapse in neuromorphic systems" 10 (10): 1297-1301, 2010
8 D. R. Stewart, "Molecule-Independent electrical switching in Pt/Organic Monolayer/Ti devices" 4 (4): 133-136, 2004
9 L. O. Chua, "Memristor—the missing circuit element" 18 (18): 507-519, 1971
10 K. Eshraghian, "Memristive device fundamentals and modeling : applications to circuits and systems simulation" 100 (100): 1991-2007, 2012
1 강순구, "멤리스터의 모델링과 연상메모리(M_CAM) 회로 설계" 대한전자공학회 48 (48): 1-9, 2011
2 J. Borghetti, "‘Memristive’ switches enable ‘stateful’ logic operations via material implication" 464 : 873-876, 2010
3 D. B. Strukov, "The missing memristor found" 453 : 80-83, 2008
4 O. Kavehei, "The fourth element : characteristics, modelling, and electromagnetic theory of the memristor" 1-28, 2010
5 A. Shkabko, "The effects of switching time and SrTiO3−xNy nanostructures on the operation of Al/SrTiO3− xNy/Al memristors" 8 (8): 074508-, 2010
6 N. H. E. Weste, "Principles of CMOS VLSI Design: A systems perspective" Addison Wesley 1985
7 S. H. Jo, "Nanoscale memristor device as synapse in neuromorphic systems" 10 (10): 1297-1301, 2010
8 D. R. Stewart, "Molecule-Independent electrical switching in Pt/Organic Monolayer/Ti devices" 4 (4): 133-136, 2004
9 L. O. Chua, "Memristor—the missing circuit element" 18 (18): 507-519, 1971
10 K. Eshraghian, "Memristive device fundamentals and modeling : applications to circuits and systems simulation" 100 (100): 1991-2007, 2012
11 K. Cho, "Influence of memristor 4th fundamental circuit component on nano-electronics educational platform" 67-70, 2012
12 International Technology Roadmap for Semiconductors, "ITRS 2009 Edition, Emerging Research Devices"
13 J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film" 34 (34): 1793-1803, 1963
14 F. Miao, "Force modulation of tunnel gaps in metal oxide memristive nanoswitches" 95 (95): 113503-, 2009
15 D. Strukov, "Exponential ionic drift : fast switching and low volatility of thin-film memristors" 94 (94): 515-519, 2009
16 J. Borghetti, "A hybrid nanomemristor/transistor logic circuit capable of self-programming" 106 (106): 1699-1703, 2009