<P>A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias charac...
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https://www.riss.kr/link?id=A107592198
2009
-
SCI,SCIE,SCOPUS
학술저널
744-746(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias charac...
<P>A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
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