<P>We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shift...

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https://www.riss.kr/link?id=A107520347
2015
-
SCI,SCIE,SCOPUS
학술저널
16243-16245(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shift...
<P>We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shifted as much as 0.14 eV in binding energy of XPS measurement, which is an evidence of p-type doping with a Fermi level change. The highly doped SWCNTs at an applied potential of 1.5 V during the electrochemical doping process showed long time stability, as long as 28 days.</P>
<P>Graphic Abstract</P><P>We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method.
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