Printed electronics fabricated using R2R printing technology are promising to be used in low cost IoT, smart packaging and biochips. However, printed electronics cannot operate at low voltages due to their very high threshold voltage (Vth) and low mob...
Printed electronics fabricated using R2R printing technology are promising to be used in low cost IoT, smart packaging and biochips. However, printed electronics cannot operate at low voltages due to their very high threshold voltage (Vth) and low mobility (μ) compared to Si-based devices. In addition, when a circuit is constructed, due to the large variation in the variables that determine the characteristics of the circuit according to the device manufacturing environment, there is a significant difference in the operating speed. In this paper, the structure of Full Adder (FA) is simulated, and the results are analyzed for representative FA structures to find suitable design method for SWCNT-based digital printed electronics.