Cu/AsSe glassy semiconductor fabricated by thermal evaporation method were investigated for the dependence of thickness ratio, temperature, and response time of the Cu/semiconductor hetero-layers. The thickness ratio of Cu-AsSe system being equal to 8...
Cu/AsSe glassy semiconductor fabricated by thermal evaporation method were investigated for the dependence of thickness ratio, temperature, and response time of the Cu/semiconductor hetero-layers. The thickness ratio of Cu-AsSe system being equal to 8 the limiting rates of Cu-diffusion into the AsSe semiconductor layer are reached. The dependence of surface resistance of the Cu/AsSe sample for the ratio of dAsSe/dCu= 8. which is above critical and equals to 270 K. And the response time of the same sample at 340 K. and 310 K are measured 7 sec and 30 sec respective.