비정질 규소막의 공정조건이 HSG-Si 형성에 미치는 영향 = Influence of the process conditions for the amorphous silicon on the HSG-Si formation

다국어 초록 (Multilingual Abstract)

In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than $5.5{\pm}0.1E19atoms/cm^3$, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are $4.5E19atoms/cm^3$ and $450{\AA}$, respectively, because of the HSG thickness over the $500{\AA}$ create to bit failure according to a short of the electrodes and the electrode.

참고문헌 (Reference)

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7 문성열, "A study on the Hot Carrier Injection Improvement of I/O Transistor" 한국전자통신학회 9 (9): 847-852, 2014

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10 문성열, "A Study on the DC parameter matching according to the shrink of 0.13㎛ technology" 한국전자통신학회 9 (9): 1227-1232, 2014