Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

다국어 초록 (Multilingual Abstract)

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO2, Gd2O3, and Si3N4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si3N4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

목차 (Table of Contents)

• Abstract
• 1. Introduction
• 2. Experiment
• 3. Results and Discussion
• 4. Summary and Conclusions
• References

참고문헌 (Reference)

1 M. Marso, "Varactor Diodes based on an AlGaNGaN HEMT layer structure" 37-42, 2001

2 B. M. Green, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs" 21 : 268-270, 2000

3 Manju Gupta, "The Preparation, Properties and Applications of Silicon Nitride Thin Films Deposited by Plasma-Eehanced Chemical Vapor Deposition" 204 : 77-106, 1991

4 X. Hu, "Si3N4/AlGaN/GaN–Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors" 79 : 2832-2834, 2001

5 C. S. Chu, "QFactor Characterization of RF GaN-Based Metal–Semiconductor–Metal Planar Interdigitated Varactor" 26 : 432-434, 2005

6 M. A. Frerking, "Novel Heterojunction Varactors" 80 : 1853-1860, 1992

7 Ho Won Jang, "Mechanism of twodimensional electron gas formation in AlxGa1-xN/GaN heterostructures" 81 (81): 1249-1251, 2002

8 M. Marso, "MSM Diodes Based on an AlGaN/GaN HEMT Laycr Structure for Varactor and Photodiode Application" 295-298, 2002

9 A. Koudymov, "Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs" 23 : 449-451, 2002

10 Y. C. Ferng, "Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor" 51 : 124201-1-124201-4, 2012

11 P. Kordoš, "High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure fieldeffect transistors" 87 : 143501-1-143501-3, 2005

12 G. Simin, "High-Power RF Switching Using III-Nitride Metal–Oxide–Semiconductor Heterojunction Capacitors" 26 : 56-58, 2005

13 R. Lupták, "Growth of gadolinium oxide films for advanced MOS structure" 80 : 154-157, 2005

14 P. D. Ye, "GaN metal-oxidesemiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric" 86 : 063501-1-063501-3, 2005

15 M. Marso, "Electrical Behaviour of The InP/InGaAs Based MSM-2DEG Diode" 41 (41): 25-31, 1997

16 M. Marso, "Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures" 27 : 945-947, 2006