중금속 오염이 n형 실리콘 태양전지의 전기적 특성에 미치는 영향에 대한 연구

다국어 초록 (Multilingual Abstract)

The dependency of the photovoltaic performance of p-/n-type silicon solar-cells on the metallic contaminant type (Fe, Cu, and Ni) and concentration was investigated. The minority-carrier recombination lifetime was degraded with increasing metallic contaminant concentration, however, the degradation sensitivity of recombination lifetime was lower at n-type than p-type silicon wafer, which means n-type silicon wafer have an immunity to the effect of metallic contamination. This is because heavy metal ions with positive charge have a much larger capture cross section of electron than hole, so that reaction with electrons occurs much more easily. The power conversion efficiency of n-type solar-cells was degraded by 9.73% when metallic impurities were introduced in the silicon bulk, which is lower degradation compared to p-type solar-cells (15.61% of efficiency degradation). Therefore, n-type silicon solar-cells have a potential to achieve high efficiency of the solar-cell in the future with a merit of immunity against metal contamination.

목차 (Table of Contents)

• ABSTRACT
• 1. 서론
• 2. 실험
• 3. 결과 및 고찰
• 4. 결론
• References

참고문헌 (Reference)

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