와이어 소잉 데미지 층이 단결정 실리콘 태양전지 셀 특성에 미치는 영향

다국어 초록 (Multilingual Abstract)

The dependency of the electrical characteristics of silicon solar-cells on the depth of damaged layer induced by wire-sawing process was investigated. To compare cell efficiency with residual sawing damage, silicon solar-cells were fabricated by using as-sawn wafers having different depth of saw damage without any damaged etching process. The damaged layer induced by wire-sawing process in silicon bulk intensely influenced the value of fill factor on solar cells, degrading fill factor to 57.20%. In addition, the photovoltaic characteristics of solar cells applying texturing process shows that although the initial depth of saw-damage induced by wire-sawing process was different, the value of short-circuit current, fill-factor, and power-conversion-efficiency have an almost same, showing ~17.4% of cell efficiency. It indicated that the degradation of solar-cell efficiency induced by wire-sawing process could be prevented by eliminating all damaged layer through sufficient pyramid-surface texturing process.

목차 (Table of Contents)

• ABSTRACT
• 1. 서론
• 2. 실험
• 3. 결과 및 고찰
• 4. 결론
• References

참고문헌 (Reference)

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