GaN Power SIT의 설계변수에 따른 전기적 특성변화에 관한 연구 = A Study on the Electrical Characteristics with Design Parameters in GaN Power Static Induction Transistor

다국어 초록 (Multilingual Abstract)

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

참고문헌 (Reference)

1 T. Uesugi, 2009

2 J. S. Foresi, 62 : 2859-, 1993

3 E. Alptekina, 50 : 741-, 2006

4 강이구, "내압특성개선을 위한 트렌치 필드링 설계 및 전기적특성에 관한 연구" 한국전기전자재료학회 23 (23): 1-5, 2010

5 B. Jayant Baliga, "Power Semiconductor Devices" PWS Publishing Co. 81-, 1996

6 S. M. Sze, "Physics of semiconductor devices" John Wiley & Sons 377-, 2007

7 M. S. Shur, "GaN-Based Materials and Devices: Growth, Fabrication, Characterization and Performance" World Scientific Publishing Co. Pte. Ltd 7-, 2004

8 M. Levinshtein, "Breakdown Phenomena In Semiconductors and Semiconductor Devices" World Scientific Publishing Co. Pte 33-, 2005