저 전류 및 고 효율로 동작하는 양자 우물 매립형 butt-coupled sampled grating distributed bragg reflector laser diode 설계 및 제작 = Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH)

다국어 초록 (Multilingual Abstract)

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

참고문헌 (Reference)

1 "Properties of widely-tunable integrated" DenBaars

2 "High power and wide quasi-continuous tuning, surfaceridge SG-DBR lasers" Sept.2000.

3 "Directly modulated sampled grating DBR lasers forlong-haul WDM communications systems" 9 (9): 377-379, 1997

4 "Coldren,Widely tunable sampled grating DBR laser with integratedelectro-absorption modulator" 11 (11): 638-640, 1999.