증착 후 열처리 온도에 따른 In2O3 박막의 구조적, 전기적, 광학적 특성 변화 = Research Effect of Annealing Temperature after Deposition on the Structural, Electrical and Optical Properties of In2O3 Films

다국어 초록 (Multilingual Abstract)

We have investigated the structural, electrical and optical properties of In2 O3 thin films deposited by RF magnetron sputtering and then annealed at 150℃ and 300℃ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed In2O3 films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at 300℃. The sheet resistance decreases with a increase in annealing temperature and In2O3 film annealed at 300℃ shows the lowest sheet resistance of 174 Ω/□. The optical transmittance of In2O3 films in a visible wavelength region also depends on the annealing temperature. The films annealed at 300℃ show higher transmittance of 76% than those of the films prepared in this study. (Received September 27, 2011; Revised October 14, 2011; Accepted October 20, 2011)