RISS 학술연구정보서비스

검색
자동완성 버튼
다국어입력
다국어 입력
あ ぁ か が さ ざ た だ な は ば ぱ ま や ゃ ら わ ゎ ん い ぃ き ぎ し じ ち ぢ に ひ び ぴ み り う ぅ く ぐ す ず つ づ っ ぬ ふ ぶ ぷ む ゆ ゅ る え ぇ け げ せ ぜ て で ね へ べ ぺ め れ お ぉ こ ご そ ぞ と ど の ほ ぼ ぽ も よ ょ ろ を
ア ァ カ サ ザ タ ダ ナ ハ バ パ マ ヤ ャ ラ ワ ヮ ン イ ィ キ ギ シ ジ チ ヂ ニ ヒ ビ ピ ミ リ ウ ゥ ク グ ス ズ ツ ヅ ッ ヌ フ ブ プ ム ユ ュ ル エ ェ ケ ゲ セ ゼ テ デ ヘ ベ ペ メ レ オ ォ コ ゴ ソ ゾ ト ド ノ ホ ボ ポ モ ヨ ョ ロ ヲ ―

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
ㅥ ㅦ ㅧ ㅨ ㅩ ㅪ ㅫ ㅬ ㅭ ㅮ ㅯ ㅰ ㅱ ㅲ ㅳ ㅴ ㅵ ㅶ ㅷ ㅸ ㅹ ㅺ ㅻ ㅼ ㅽ ㅾ ㅿ ㆀ ㆁ ㆂ ㆃ ㆄ ㆅ ㆆ ㆇ ㆈ ㆉ ㆊ ㆋ ㆌ ㆍ ㆎ
Α Β Γ Δ Ε Ζ Η Θ Ι Κ Λ Μ Ν Ξ Ο Π Ρ Σ Τ Υ Φ Χ Ψ Ω α β γ δ ε ζ η θ ι κ λ μ ν ξ ο π ρ σ τ υ φ χ ψ ω
á à Á À é è É È ç Ç ê
Ä Ö Ü ä ö ü ß
ְ ֳ ֲ ֱ ָ ַ ֵ ֶ ִ ֹ ּ ֻ ׂ ׁ ּ פ ם ן ו ט א ר ק ף ך ל ח י ע כ ג ד ש ץ ת צ מ נ ה ב
‘ ’ “ ” 〔 〕 〈 〉 「 」 『 』 【 】 ＂ （ ） ［ ］ ｛ ｝
± × ÷ ≠ ≤ ≥ ∞ ∴ ♂ ♀ ∠ ⊥ ⌒ ∂ ∇ ≡ ≒ ≪ ≫ √ ∽ ∝ ∵ ∫ ∬ ∈ ∋ ⊆ ⊇ ⊂ ⊃ ∪ ∩ ∧ ∨ ￢ ⇒ ⇔ ∀ ∃ ∮ ∑ ∏ ＋ － ＜ ＝ ＞
、 。 · ‥ … ¨ 〃 ― ∥ ＼ ∼ ´ ～ ˇ ˘ ˝ ˚ ˙ ¸ ˛ ¡ ¿ ː ！ ＇ ， ． ／ ： ； ？ ＾ ＿ ｀ ｜
½ ⅓ ⅔ ¼ ¾ ⅛ ⅜ ⅝ ⅞ ¹ ² ³ ⁴ ⁿ ₁ ₂ ₃ ₄
Æ Ð Ħ IJ Ł Ø Œ Þ Ŧ Ŋ æ đ ð ħ ı ij ĸ ŀ ł ø œ ß þ ŧ ŋ ʼn
А Б В Г Д Е Ё Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я а б в г д е ё ж з и й к л м н о п р с т у ф х ц ч ш щ ъ ы ь э ю я
′ ″ ℃ Å ￠ ￡ ￥ ¤ ℉ ‰ ＄ ％ Ｆ ￦ ㎕ ㎖ ㎗ ℓ ㎘ ㏄ ㎣ ㎤ ㎥ ㎦ ㎙ ㎚ ㎛ ㎜ ㎝ ㎞ ㎟ ㎠ ㎡ ㎢ ㏊ ㎍ ㎎ ㎏ ㏏ ㎈ ㎉ ㏈ ㎧ ㎨ ㎰ ㎱ ㎲ ㎳ ㎴ ㎵ ㎶ ㎷ ㎸ ㎹ ㎀ ㎁ ㎂ ㎃ ㎄ ㎺ ㎻ ㎽ ㎾ ㎿ ㎐ ㎑ ㎒ ㎓ ㎔ Ω ㏀ ㏁ ㎊ ㎋ ㎌ ㏖ ㏅ ㎭ ㎮ ㎯ ㏛ ㎩ ㎪ ㎫ ㎬ ㏝ ㏐ ㏓ ㏃ ㏉ ㏜ ㏆
§ ※ ☆ ★ ○ ● ◎ ◇ ◆ □ ■ △ ▽ → ← ↑ ↓ ↔ 〓 ◁ ◀ ▷ ▶ ♤ ♠ ♡ ♥ ♧ ♣ ⊙ ◈ ▣ ◐ ◑ ▒ ▤ ▥ ▨ ▧ ▦ ▩ ♨ ☏ ☎ ☜ ☞ † ‡ ↕ ↗ ↙ ↖ ↘ ♭ ♩ ♪ ♬ ㉿ ㈜ № ㏇ ™ ㏂ ㏘ ℡ ＃ ＆ ＊ ＠ ª º
ⅰ ⅱ ⅲ ⅳ ⅴ ⅵ ⅶ ⅷ ⅸ ⅹ Ⅰ Ⅱ Ⅲ Ⅳ Ⅴ Ⅵ Ⅶ Ⅷ Ⅸ Ⅹ
ا ب ت ث ج ح خ د ذ ر ز س ش ص ض ط ظ ع غ ف ق ک ل م ن ه و ی
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      Investigation of the Grain Boundary Effect on the Electrical Property of Graphene = 그래핀의 결정립이 전기적 특성에 미치는 영향 고찰

      한글로보기

      https://www.riss.kr/link?id=T15826967

      • 0

        상세조회

      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      국문 초록 (Abstract) kakao i 다국어 번역

      한국어
      영어
      그래핀은 뛰어난 전기적, 기계적 광학적 특성을 보여주는 2차원 재료로, 2D 재료
      연구 분야를 여는데 있어 크게 이바지한 물질이다. 그러나, 대부분의 유망한 특성은
      단결정 그래핀으로부터 나오는데, 이때 단결정 그래핀은 수십 마이크로 미터 단위밖
      에 제작이 불가능하다. 웨이퍼 스케일로 그래핀을 합성하기 위하여, 화학적 방법으로
      합성하는 방법 (chemical exfoliation), SiC 기판에서 Si을 선택적으로 승화하는 방법
      및 CVD (Chemical vapor deposition) 방법이 있는데, CVD는 거의 무한한 크기로의
      합성이 가능하며 품질이 좋아 가장 각광받는 방법 중 하나이다. 하지만 CVD로 합성
      한 그래핀은 몇 가지의 이유로 단결정 그래핀의 좋은 특성을 보여주지 않기 때문에
      CVD 그래핀의 전기적 특성을 높이기 위한 대규모 노력과 연구가 수행되었다.
      1장과 2장은 서론으로, 1 장에서는 그래핀의 기본 물성과 합성하는 방법에 대하여
      소개하였다. 2 장에서는 그래핀의 전기적 특성을 제한하는, 기판 산란, 결정립 산란
      및 기타 산란 인자의 대하여 고찰해 보았으며, 이러한 한계를 극복하고 그래핀의 전
      기적 특성을 향상시키기 위하여 현재 어떠한 연구가 이루어지고 있는지에 대하여 요
      약하였다. 그 중에서도 도핑하는 방법과 그래핀의 도메인 크기를 키우는 방법이 현재
      주된 연구의 흐름이다.
      3장은 4장의 준비 부분으로, 그래핀의 결정립이 미치는 영향을 살펴보기 위하여
      다양한 크기의 그래핀을 합성하였다. 그래핀의 CVD 성장에 대한 기본 이론을 통하
      여, 메탄가스의 양을 감소시킴으로써 도메인 크기 성장을 꾀할 수 있었으며 실험 상
      태의 최적화를 위하여 heterogeneous 핵생성을 막기 위한 전기연마 공정과, 낮은 메
      탄가스 공급에 의하여 그래핀의 성장이 저해되는 현상을 막기 위하여 2 단계 성장
      과정이 제안되었다.
      4장은 이 연구의 두 본문 중 하나로, 그래핀의 결정립이 전기적 특성에 미치는 영
      향에 대하여 고찰하였다. 그 결과 도핑 유무에 관계없이 도메인 크기가 증가함에 따
      라 면저항의 감소를 관찰할 수 있었으며, 이는 캐리어 이동도의 증가에 기인한다는
      현상을 발견하였다. Ohmic scaling 모델을 통하여 추가로 분석한 결과 17 um의 도메
      인을 가지는 그래핀의 경우 20% 만큼의 면저항의 비중을 결정립이 차지하고 있다는
      것을 알 수 있었다. 또한 Mayadas-Shatzkes 모델에 적용한 결과 R 값이 0.97로 굉
      장히 높은 값을 띄고 있다는 것을 확인할 수 있었으며, 결국 두 모델을 이용한 연구
      를 통하여 그래핀의 결정립이 강산 캐리어 산란 효과를 가지고 있음을 밝힐 수 있었
      다. 도핑 공정은 또한 다양한 크기의 그래핀에 적용을 하여, 그래핀의 결정립이 도핑
      하지 않았을 때와 유사하게 강한 산란효과를 가짐을 확인할 수 있었고, 추가적으로
      관찰된 사실 중 하나는 그래핀의 도핑 효율이 결정립에서 더 높다는 것이었다. 도핑
      방법과 그래핀의 도메인 크기를 키우는 두 가지 방법을 종합한 결과, 10 um 이상의
      그래핀을 증착한 후 도핑을 수행하는 것이 가장 효과적으로 그래핀의 전기적 특성을
      향상시킬 수 있다는 사실을 발견하였다.
      5장에서는 Ru을 단원자증착법을 (ALD) 통하여 결정립에만 선택적으로 도펀트를
      증착하였으며, 그래핀의 결정립이 도핑에 미치는 영향에 대하여 고찰하였다. 그 결과
      ALD 20 사이클에서 180 ohm/sq, 50 사이클에서 125 ohm/sq 로 전기적 특성이 뛰어
      난 그래핀을 증착할 수 있었다. 또한 Ru evaporation을 그래핀에 수행하여 그래핀 표
      면에 homogeneous하게 Ru을 증착함으로써, ALD 를 통하여 도핑하였을 때와 비교하
      였으며, 그 결과 그래핀의 결정립에서 도핑의 효율이 더 높다는 것을 밝혀내게 되었
      다. 위 연구를 통하여 그래핀의 결정립이 전기적 특성에 미치는 영향에 대하여 잘 파
      악할 수 있었으며, 추후 그래핀의 결정립을 포함하는 전기적 특성, 도핑 효과에 대한
      연구에 기초로 활용할 수 있을 것으로 기대한다
      번역하기

      그래핀은 뛰어난 전기적, 기계적 광학적 특성을 보여주는 2차원 재료로, 2D 재료 연구 분야를 여는데 있어 크게 이바지한 물질이다. 그러나, 대부분의 유망한 특성은 단결정 그래핀으로부터 ...

      그래핀은 뛰어난 전기적, 기계적 광학적 특성을 보여주는 2차원 재료로, 2D 재료
      연구 분야를 여는데 있어 크게 이바지한 물질이다. 그러나, 대부분의 유망한 특성은
      단결정 그래핀으로부터 나오는데, 이때 단결정 그래핀은 수십 마이크로 미터 단위밖
      에 제작이 불가능하다. 웨이퍼 스케일로 그래핀을 합성하기 위하여, 화학적 방법으로
      합성하는 방법 (chemical exfoliation), SiC 기판에서 Si을 선택적으로 승화하는 방법
      및 CVD (Chemical vapor deposition) 방법이 있는데, CVD는 거의 무한한 크기로의
      합성이 가능하며 품질이 좋아 가장 각광받는 방법 중 하나이다. 하지만 CVD로 합성
      한 그래핀은 몇 가지의 이유로 단결정 그래핀의 좋은 특성을 보여주지 않기 때문에
      CVD 그래핀의 전기적 특성을 높이기 위한 대규모 노력과 연구가 수행되었다.
      1장과 2장은 서론으로, 1 장에서는 그래핀의 기본 물성과 합성하는 방법에 대하여
      소개하였다. 2 장에서는 그래핀의 전기적 특성을 제한하는, 기판 산란, 결정립 산란
      및 기타 산란 인자의 대하여 고찰해 보았으며, 이러한 한계를 극복하고 그래핀의 전
      기적 특성을 향상시키기 위하여 현재 어떠한 연구가 이루어지고 있는지에 대하여 요
      약하였다. 그 중에서도 도핑하는 방법과 그래핀의 도메인 크기를 키우는 방법이 현재
      주된 연구의 흐름이다.
      3장은 4장의 준비 부분으로, 그래핀의 결정립이 미치는 영향을 살펴보기 위하여
      다양한 크기의 그래핀을 합성하였다. 그래핀의 CVD 성장에 대한 기본 이론을 통하
      여, 메탄가스의 양을 감소시킴으로써 도메인 크기 성장을 꾀할 수 있었으며 실험 상
      태의 최적화를 위하여 heterogeneous 핵생성을 막기 위한 전기연마 공정과, 낮은 메
      탄가스 공급에 의하여 그래핀의 성장이 저해되는 현상을 막기 위하여 2 단계 성장
      과정이 제안되었다.
      4장은 이 연구의 두 본문 중 하나로, 그래핀의 결정립이 전기적 특성에 미치는 영
      향에 대하여 고찰하였다. 그 결과 도핑 유무에 관계없이 도메인 크기가 증가함에 따
      라 면저항의 감소를 관찰할 수 있었으며, 이는 캐리어 이동도의 증가에 기인한다는
      현상을 발견하였다. Ohmic scaling 모델을 통하여 추가로 분석한 결과 17 um의 도메
      인을 가지는 그래핀의 경우 20% 만큼의 면저항의 비중을 결정립이 차지하고 있다는
      것을 알 수 있었다. 또한 Mayadas-Shatzkes 모델에 적용한 결과 R 값이 0.97로 굉
      장히 높은 값을 띄고 있다는 것을 확인할 수 있었으며, 결국 두 모델을 이용한 연구
      를 통하여 그래핀의 결정립이 강산 캐리어 산란 효과를 가지고 있음을 밝힐 수 있었
      다. 도핑 공정은 또한 다양한 크기의 그래핀에 적용을 하여, 그래핀의 결정립이 도핑
      하지 않았을 때와 유사하게 강한 산란효과를 가짐을 확인할 수 있었고, 추가적으로
      관찰된 사실 중 하나는 그래핀의 도핑 효율이 결정립에서 더 높다는 것이었다. 도핑
      방법과 그래핀의 도메인 크기를 키우는 두 가지 방법을 종합한 결과, 10 um 이상의
      그래핀을 증착한 후 도핑을 수행하는 것이 가장 효과적으로 그래핀의 전기적 특성을
      향상시킬 수 있다는 사실을 발견하였다.
      5장에서는 Ru을 단원자증착법을 (ALD) 통하여 결정립에만 선택적으로 도펀트를
      증착하였으며, 그래핀의 결정립이 도핑에 미치는 영향에 대하여 고찰하였다. 그 결과
      ALD 20 사이클에서 180 ohm/sq, 50 사이클에서 125 ohm/sq 로 전기적 특성이 뛰어
      난 그래핀을 증착할 수 있었다. 또한 Ru evaporation을 그래핀에 수행하여 그래핀 표
      면에 homogeneous하게 Ru을 증착함으로써, ALD 를 통하여 도핑하였을 때와 비교하
      였으며, 그 결과 그래핀의 결정립에서 도핑의 효율이 더 높다는 것을 밝혀내게 되었
      다. 위 연구를 통하여 그래핀의 결정립이 전기적 특성에 미치는 영향에 대하여 잘 파
      악할 수 있었으며, 추후 그래핀의 결정립을 포함하는 전기적 특성, 도핑 효과에 대한
      연구에 기초로 활용할 수 있을 것으로 기대한다

      더보기

      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

      영어
      한국어
      Graphene is two-dimensional (2D) material showing outstanding electrical, mechanical, optical property, which opens the 2D material research field. However, most promising properties is from the single crystal graphene which only can collect dozens of um size. To synthesize wafer scale graphene chemical exfoliation, selective sublimation of Si from SiC, and CVD process were proposed, CVD is the one of the most promising method because of its unlimited scalability and high quality. The CVD grown graphene, however, does not showing remarkable property as single crystal graphene for several reason. Therefore, massive efforts and studies were conducted to increase electrical property of graphene.
      Chapters 1 and 2 are the introductory sections. In Chapter 1, basic property and synthesis method for graphene is placed. In chapter 2, the electrical limiting factors will be described, the bulk resistivity of graphene, substrate scattering, grain boundary scattering and other scattering factors. Then, the current approaches to overcome the limits and to enhancing electrical property of graphene will be summarized. Among them, doping and enlarging grain size emphasized as a major electrical property enhancing methods.
      Chapter 3 is the preparation part of chapter 4, synthesizing various size of graphene to study grain boundary effect. The basis theory for CVD growth is studied and reducing carbon source supply enlarging grain size of graphene was achieved. During optimizing experimental condition, the electropolishing process and two-step growth process were proposed, to prevent heterogeneous nucleation and unfilled gap problem because of low carbon source supply.
      In chapter 4, one of the two main part on this study, grain size dependence on electrical property of undoped/doped graphene is evaluated. The sheet resistance is reduced as the grain size increased since the carrier mobility enhanced, regardless of undoping/doping. Further analysis conducted by ohmic scaling model, it shows that 17 um size of graphene has 20 % of grain boundary sheet resistance. Another model, Mayadas-Shatzkes model, also applied on graphene, the resultant shows 0.97 of reflection coefficient, much large than other metals. In both model studies, grain boundary is considerably act as strong scattering center and controlling grain size turned out to be very important. The doping process also applied on various size of graphene and the similar result was observed form both models, considering grain boundary, the noticeable presumptive fact revealed that the doping efficiency is higher on the grain boundary of graphene. The conjugated experiment of doping and enlarging grain size shows that at small grain size i.g., 1 um, grain size effect is too strong, even doping process applied about 1000 ohm/sq can be achieved, however, more than 10 um of grain size, doping process becomes more effect than enlarging grain size. Therefore, it was confirmed that the most efficient way for enhancing electrical property of graphene is growing over 10 um size of graphene and conducting doping process.
      In Chapter 5 grain boundary effect on doping is further studied by employing Ru ALD on graphene. By the selective Ru deposition on grain boundary of graphene 180 ohm/sq at 20 cycle, 125 ohm/sq at 50 cycle is achieved. The control experiment, Ru evaporation is conducted to compare the doping effect with Ru ALD. The result shows that doping is occurred more efficiently on grain boundary of graphene.
      To conclude, the characteristic of graphene grain boundary on electrical property massively performed in this study. The grain boundary is revealed to the high impact on electrical property of graphene. Interestingly, the grain boundary acts as scattering center for carrier transport, however, it also acts as aa efficient doping site for doping process. In this study, the basics of the grain boundary property on undoped/doped graphene is established and expected to the fundamentals for the grain boundary involving electrical property researches.
      번역하기

      Graphene is two-dimensional (2D) material showing outstanding electrical, mechanical, optical property, which opens the 2D material research field. However, most promising properties is from the single crystal graphene which only can collect dozens of...

      Graphene is two-dimensional (2D) material showing outstanding electrical, mechanical, optical property, which opens the 2D material research field. However, most promising properties is from the single crystal graphene which only can collect dozens of um size. To synthesize wafer scale graphene chemical exfoliation, selective sublimation of Si from SiC, and CVD process were proposed, CVD is the one of the most promising method because of its unlimited scalability and high quality. The CVD grown graphene, however, does not showing remarkable property as single crystal graphene for several reason. Therefore, massive efforts and studies were conducted to increase electrical property of graphene.
      Chapters 1 and 2 are the introductory sections. In Chapter 1, basic property and synthesis method for graphene is placed. In chapter 2, the electrical limiting factors will be described, the bulk resistivity of graphene, substrate scattering, grain boundary scattering and other scattering factors. Then, the current approaches to overcome the limits and to enhancing electrical property of graphene will be summarized. Among them, doping and enlarging grain size emphasized as a major electrical property enhancing methods.
      Chapter 3 is the preparation part of chapter 4, synthesizing various size of graphene to study grain boundary effect. The basis theory for CVD growth is studied and reducing carbon source supply enlarging grain size of graphene was achieved. During optimizing experimental condition, the electropolishing process and two-step growth process were proposed, to prevent heterogeneous nucleation and unfilled gap problem because of low carbon source supply.
      In chapter 4, one of the two main part on this study, grain size dependence on electrical property of undoped/doped graphene is evaluated. The sheet resistance is reduced as the grain size increased since the carrier mobility enhanced, regardless of undoping/doping. Further analysis conducted by ohmic scaling model, it shows that 17 um size of graphene has 20 % of grain boundary sheet resistance. Another model, Mayadas-Shatzkes model, also applied on graphene, the resultant shows 0.97 of reflection coefficient, much large than other metals. In both model studies, grain boundary is considerably act as strong scattering center and controlling grain size turned out to be very important. The doping process also applied on various size of graphene and the similar result was observed form both models, considering grain boundary, the noticeable presumptive fact revealed that the doping efficiency is higher on the grain boundary of graphene. The conjugated experiment of doping and enlarging grain size shows that at small grain size i.g., 1 um, grain size effect is too strong, even doping process applied about 1000 ohm/sq can be achieved, however, more than 10 um of grain size, doping process becomes more effect than enlarging grain size. Therefore, it was confirmed that the most efficient way for enhancing electrical property of graphene is growing over 10 um size of graphene and conducting doping process.
      In Chapter 5 grain boundary effect on doping is further studied by employing Ru ALD on graphene. By the selective Ru deposition on grain boundary of graphene 180 ohm/sq at 20 cycle, 125 ohm/sq at 50 cycle is achieved. The control experiment, Ru evaporation is conducted to compare the doping effect with Ru ALD. The result shows that doping is occurred more efficiently on grain boundary of graphene.
      To conclude, the characteristic of graphene grain boundary on electrical property massively performed in this study. The grain boundary is revealed to the high impact on electrical property of graphene. Interestingly, the grain boundary acts as scattering center for carrier transport, however, it also acts as aa efficient doping site for doping process. In this study, the basics of the grain boundary property on undoped/doped graphene is established and expected to the fundamentals for the grain boundary involving electrical property researches.

      더보기

      목차 (Table of Contents)

      • Chapter 1. Introduction 1
      • 1.1. The fundamentals of graphene 2
      • 1.2. Electrical properties of graphene 5
      • 1.3. Synthesis method of graphene for wafer scale 8
      • References 20
      • Chapter 1. Introduction 1
      • 1.1. The fundamentals of graphene 2
      • 1.2. Electrical properties of graphene 5
      • 1.3. Synthesis method of graphene for wafer scale 8
      • References 20
      • Chapter 2. Limiting factors in CVD graphene growth 24
      • 2.1. Electrical property of CVD graphene 25
      • 2.2. Limiting factors in CVD growth graphene 29
      • 2.2.1. Lattice phonon scattering 29
      • 2.2.2. Substrate scattering 35
      • 2.2.3. Grain boundary scattering 38
      • 2.2.4. Other scattering factors 45
      • 2.3. Approches enhancing electrical property of CVD graphene 50
      • References 55
      • Chapter 3. CVD graphene growth with different grain size 65
      • 3.1. Basic theory of CVD growth of graphene 66
      • 3.2. CVD graphene growth 75
      • 3.2.1. Grwoth parameters for enlarge grain size 75
      • 3.2.2. Heterogeneous nucleation of CVD graphene 81
      • 3.2.3. JMAK growth kinetics of CVD graphene 87
      • 3.2.4. Growth of CVD graphene with different grain size 92
      • References 96
      • Chapter 4. The grain size dependence on electrical property of graphene 100
      • 4.1. The electrical property of 4 different domain sized graphene 101
      • 4.1.1. Experimental scheme 101
      • 4.1.2. The electrical property of undoped/doped graphene 104
      • 4.2. Ohmic scaling model 108
      • 4.2.1. Ohmic scaling model 108
      • 4.2.2. Application of ohmic scaling model 114
      • 4.2.3. Limitation of ohmic scaling model 121
      • 4.3. Mayadas-Shatzkes model 125
      • 4.3.1. Mayadas-Shatzkes model 125
      • 4.3.2. Application of MS model 129
      • 4.4. Approches to overcome electrical property limiting factor of CVD graphene 133
      • 4.4.1. The doping and the enlarging grain size 133
      • 4.4.2. The portion of limiting factors in the sheet resistance of graphene 140
      • 4.5. Summary and conclusion 143
      • References 144
      • Chapter 5. Enhancement of electrical property of graphene by Ru ALD 148
      • 5.1. Introduction 149
      • 5.1.1. Experiment 150
      • 5.2. Characterization of Ru doped graphene 151
      • 5.2.1. Microstructure analysis and Ru growth behavior 151
      • 5.2.2. The electrical property of Ru doped graphene 159
      • 5.3. Comparative study of graphene doped by Ru ALD and Ru evaporation 166
      • 5.4. Summary and conclusions 169
      • References 170
      • Chapter 6. Summary and conclusions 173
      • Abstract (in Korean) 176
      더보기

      참고문헌 (Reference)

      1. S. J. ; Jo , Y. W., Duong , D. L.G. H.Lee , S. M.GunesF. ;,S. ;, S. T. ;,; TaQ.; SoK.; YoonS. J. ; Chae, ParkH. ; Chae , S. H., , ,

      2. The Rise of Graphene, GeimA. K.Novoselov , K. S., Nat Mater6 ( 3 ) , 183- 191, , 2007

      3. The Band Theory of Graphite, WallaceP. R., Phys Rev 194771 ( 9 ) , 622-634,

      4. Kim , K. S. ; Ozyilmaz , B. ;, 27 . BaeS. ; KimH. ; LeeY. ; Xu ,; Park , J.-S.Zheng , Y. ;, J. ; LeiT. ; Ri, H. ;, Y. I. ;, Y.-J ., , J.-H., B. H. ; Iijima ,, , ;

      5. Kim , K. S. ; Ozyilmaz , B. ;, 16 . BaeS. ; KimH. ; LeeY. ; Xu ,; Park , J.-S.Zheng , Y. ;, J. ; LeiT. ; Ri, H. ;, Y. I. ;, Y.-J ., , J.-H., B. H. ; Iijima ,, , ;

      6. , Y. ; Park , J. ; McEuen , P., Huang , P. Y.Ruiz-Vargas , C. S.van der Zande ,M. ; WhitneyW. S. ; LevendorfM.; KevekJ. W. ;, S. ;,S. ;, C. J. ;, ;D. A. , Grains and grain, , Muller

      7. ; Niraj , P. ; Duesberg , G. ;, . Hernandez ,; Nicolosi , V.Lotya , M. ;, F. M.Sun , Z.De , S.McGovern , I.; Holland ,; Byrne ,; Gun'Ko , Y.; Boland , J., , S., R. ; Hutchison , J., , ;

      8. D. ; Wee , A. T. S. ; Chen , W., Chen , Z. ;, I. ; WangR. ; XieL. F. ; Mao ,Y. ; Huang ,;, YZ. ; GaoX.; Chen ,K. ; Ma, Surface transfer holeepitaxial graphene using MoO3 thin film, , doping

      9. Experimental Review of Graphene, 7. CooperD. R.D ’ Anjou , B.Ghattamaneni , N.Harack , B.Hilke , M.Horth , A.Majlis , N.Massicotte , M.Vandsburger , L.Whiteway , E.Yu , V., ISRN Condensed Matter Physics501686, , 20122012

      10. Doping Graphene with Metal Contacts, Giovannetti , G.Khomyakov , P. A.Brocks , G.KarpanV. M.van den Brink , J.Kelly , P. J., Phys Rev Lett101 ( 2 ) , 026803, , 2008

      1. S. J. ; Jo , Y. W., Duong , D. L.G. H.Lee , S. M.GunesF. ;,S. ;, S. T. ;,; TaQ.; SoK.; YoonS. J. ; Chae, ParkH. ; Chae , S. H., , ,

      2. The Rise of Graphene, GeimA. K.Novoselov , K. S., Nat Mater6 ( 3 ) , 183- 191, , 2007

      3. The Band Theory of Graphite, WallaceP. R., Phys Rev 194771 ( 9 ) , 622-634,

      4. Kim , K. S. ; Ozyilmaz , B. ;, 27 . BaeS. ; KimH. ; LeeY. ; Xu ,; Park , J.-S.Zheng , Y. ;, J. ; LeiT. ; Ri, H. ;, Y. I. ;, Y.-J ., , J.-H., B. H. ; Iijima ,, , ;

      5. Kim , K. S. ; Ozyilmaz , B. ;, 16 . BaeS. ; KimH. ; LeeY. ; Xu ,; Park , J.-S.Zheng , Y. ;, J. ; LeiT. ; Ri, H. ;, Y. I. ;, Y.-J ., , J.-H., B. H. ; Iijima ,, , ;

      6. , Y. ; Park , J. ; McEuen , P., Huang , P. Y.Ruiz-Vargas , C. S.van der Zande ,M. ; WhitneyW. S. ; LevendorfM.; KevekJ. W. ;, S. ;,S. ;, C. J. ;, ;D. A. , Grains and grain, , Muller

      7. ; Niraj , P. ; Duesberg , G. ;, . Hernandez ,; Nicolosi , V.Lotya , M. ;, F. M.Sun , Z.De , S.McGovern , I.; Holland ,; Byrne ,; Gun'Ko , Y.; Boland , J., , S., R. ; Hutchison , J., , ;

      8. D. ; Wee , A. T. S. ; Chen , W., Chen , Z. ;, I. ; WangR. ; XieL. F. ; Mao ,Y. ; Huang ,;, YZ. ; GaoX.; Chen ,K. ; Ma, Surface transfer holeepitaxial graphene using MoO3 thin film, , doping

      9. Experimental Review of Graphene, 7. CooperD. R.D ’ Anjou , B.Ghattamaneni , N.Harack , B.Hilke , M.Horth , A.Majlis , N.Massicotte , M.Vandsburger , L.Whiteway , E.Yu , V., ISRN Condensed Matter Physics501686, , 20122012

      10. Doping Graphene with Metal Contacts, Giovannetti , G.Khomyakov , P. A.Brocks , G.KarpanV. M.van den Brink , J.Kelly , P. J., Phys Rev Lett101 ( 2 ) , 026803, , 2008

      11. The materials science of thin films, Ohring , M., Academic Press : Boston, , 1992

      12. S. K. ; Colombo , L. ; Ruoff , R. S., Li ,S. ; CaiW. W. ;, J. H. ;, S. ;, J. ;, D. X.Piner , R.Velamakanni , A. ;, I. ;,; Banerjee, Large-AreaHigh-Quality and Uniform Graphene Films on, , Synthesis

      13. Charged-impurity scattering in graphene, ChenJ. H.Jang , C.Adam , S.Fuhrer , M. S.Williams , E. D.Ishigami , M., Nature Physics4 ( 5 ) , 377-381, , 2008

      14. Copper-Catalyzed Diels ? Alder Reactions, Reymond , S.Cossy , J., Chemical Reviews108 ( 12 ) , 5359-5406, , 2008

      15. The chemistry of the transition elements, Earnshaw , A.Harrington , T. J., Clarendon Press : Oxford ,, , 1973

      16. The mean free path of electrons in metals, SondheimerE. H., Adv Phys 19521 ( 1 ) , 1-42,

      17. Graphene Annealing : How Clean Can It Be ?, Lin , Y.-C.Lu , C.-C.Yeh , C.-H.Jin , C.Suenaga , K.Chiu , P.-W., Nano Lett12 ( 1 ) , 414-419, , 2011

      18. Electrical conductivity of a graphite layer, Pietronero , L.ssler , S.ZellerH. R.Rice , M. J., Phys Rev B22 ( 2 ) , 904-910, , 1980

      19. Kinetics of Phase Change . I General Theory, Avrami , M., The Journal of Chemical Physics 19397 ( 12 ) , 1103-1112,

      20. Lee , S. Y. ; Kim , J. M. ; Choi , J.-Y . ;, . Shin ,. ; Choi ,M. ; ChoiD. ; Han ,H. ; Yoon ,;, H.-; Kim , S.-W.Jin , Y. W., , Y. H. , Control ofof Graphene by Various Dopants and, , Electronic

      21. , L. ; Vogel , E. M. ; Voelkl , E. ; Colombo, 68 ., X. ;, C. W.Venugopal , A.An , J.Suk , J.; Han ,; Borysiak , M.Cai , W.Velamakanni , A.Zhu , Y. ;, L. ;R. S. , Graphene Films with, , Ruoff

      22. , L. ; Vogel , E. M. ; Voelkl , E. ; Colombo, 27 ., X. ;, C. W.Venugopal , A.An , J.Suk , J.; Han ,; Borysiak , M.Cai , W.Velamakanni , A.Zhu , Y. ;, L. ;R. S. , Graphene Films with, , Ruoff

      23. ; Hone , J. , High-Strength Chemical-Vapor ?, . Lee , G.-H.Cooper , R. C.An , S.; Lee , S. ;der Zande ,; Petrone , N.Hammerberg , A.; Lee ,; Crawford ,;, W.Kysar , J., GrapheneBoundaries . Science 2013 , 340, , and

      24. Substrate-limited electron dynamics in graphene, Fratini , S.Guinea , F., Phys Rev B77 ( 19 ) , 195415, , 2008

      25. Chemical methods for the production of graphenes, Park , S.Ruoff , R. S., Nat Nanotechnol4 ( 4 ) , 217-224, , 2009

      26. Highly conducting graphene sheets and Langmuir ?, Li , X.Zhang , G.Bai , X.Sun , X.Wang , X.Wang , E.Dai , H., Blodgett filmsNat Nanotechnol3 ( 9 ) , 538-542, , 2008

      27. ; Giannetta , A. ; Wright , S. , An evaluation of, 22 ., R. S. ;, E. T.Hu , C.; Motoyama ,; Lanzillo ,; Metzler ,; Jiang ,; Demarest ,; Quon ,; Gignac ,; Breslin ,, and Mayadas-Shatzkes14nm node wide, , models

      28. Ultrahigh electron mobility in suspended graphene, BolotinK. I.Sikes , K. J.Jiang , Z.Klima , M.Fudenberg , G.Hone , J.Kim , P.Stormer , H. L., Solid State Commun146 ( 9-10 ) , 351-355, , 2008

      29. Initial Stage of Graphene Growth on a Cu Substrate, Hwang , C.Yoo , K.Kim , S. J.Seo , E. K.Yu , H.Bir ?L. P., The Journal of Physical Chemistry C115 ( 45 ) , 22369-22374, , 2011

      30. Growth of Bilayer Graphene on Insulating Substrates, Yan , Z.Peng , Z. W.Sun , Z . Z.Yao , J.Zhu , Y.Liu , Z.AjayanP. M.Tour , J. M., Acs Nano5 ( 10 ) , 8187-8192, , 2011

      31. High-resolution core-level study of 6H-SiC ( 0001 ), JohanssonL. I.Owman , F.M ? rtenssonP., Phys Rev B53 ( 20 ) , 13793-13802, , 1996

      32. Materials science and engineering : an introduction, CallisterW. D., 4th edJohn Wiley & Sons : New York, , 1997

      33. Surface structure and composition of β- and 6H-SiC, Kaplan , R., Surf Sci215 ( 1 ) , 111-134, , 1989

      34. Wafer-Scale Synthesis and Transfer of Graphene Films, Lee , Y.Bae , S.Jang , H.Jang , S.Zhu , S.-E.Sim , S. H.Song , Y. I.Hong , B. H.Ahn , J.-H., Nano Lett10 ( 2 ) , 490-493, , 2010

      35. Electric Field Effect in Atomically Thin Carbon Films, Novoselov , K. S.Geim , A. K.Morozov , S. V.Jiang , D.Zhang , Y.Dubonos , S. V.GrigorievaI. V.Firsov , A . A, Science306 ( 5696 ) , 666-669, , 2004

      36. H ? chstlamellarer Kohlenstoff aus Graphitoxyhydroxyd, Ruess , G.Vogt , F., Monatshefte f ? r Chemie und verwandte Teile anderer Wissenschaften 1948 , 78 ( 3 ) , 222- 242,

      37. , Atomically precise bottom-up fabrication of graphene, . Cai ,; Ruffieux ,; Jaafar ,; Bieri ,; Braun ,; Blankenburg ,; Muoth ,; Seitsonen , A.; Saleh ,; Feng ,; M ?,; Fasel ,, ., 466 ( 7305 ) ,, , Nature

      38. Resistivity and Structure of Evaporated Aluminum Films, MayadasA. F.Feder , R.Rosenberg , R., Journal of Vacuum Science and Technology6 ( 4 ) , 690- 693, , 1969

      39. ; Chung , T. F. ; Peng , P. ; Guisinger , N. P. ; Stach, Yu , Q.Jauregui , L.; Wu , W.Colby , R.Tian , J. ;,; CaoH. ; LiuZ. ; PandeyD.Wei ,, E. A., J. ; Pei , S.-S., , ;

      40. Electric transport theory of Dirac fermions in graphene, Yan , X.-Z .Romiah , Y.Ting , C. S., Phys Rev B77 ( 12 ) , 125409, , 2008

      41. Graphene Growth Dynamics on Epitaxial Copper Thin Films, JacobbergerR. M.Arnold , M. S., Chem Mater, , 2013

      42. Inelastic scattering and current saturation in graphene, Perebeinos , V.Avouris , P., Phys Rev B81 ( 19 ) , 195442, , 2010

      43. , C. ; Stitt , J. ; Snyder , D. W. , Characterization of, . Fanton ,A. ; RobinsonJ . A. ;, C. ; LiuY. ; HollanderM. J. ;, B. E.LaBella , M.Trumbull , K.Kasarda , R. ;, Films andon Sapphire by Metal-Free Chemical Vapor, , Transistors

      44. Optimization for enhanced thermal technology CAD purpose, Holzer , S., Dissortation in institute for, , 2010

      45. , S. ; Chang , S. ; Wang , L. , Growth of Millimeter-Size, , C. ;, W. ;, C. ;, G. ;, B. ;, C. ;, Y. ; ZouW. ; ChenW. ; ZhangX.-A . ;, Crystal GrapheneFoils by Circumfluence Chemical Vapor Deposition, , on

      46. Atomic structures of 6H SiC ( 0001 ) and ( 0001 & # x0304, Li , L.Tsong , I. S. T., 351 ( 1 ) , 141-148, , 1996

      47. Graphene : Electronic and Photonic Properties and Devices, Avouris , P., Nano Lett10 ( 11 ) , 4285-4294, , 2010

      48. Scaling properties of polycrystalline graphene : a review, Isacsson , A.Cummings , A. W.Colombo , L.Colombo , L.KinaretJ. M.Roche , S., 2D Materials4 ( 1 ) , 012002, , 2016

      49. Acidity Constants of Some Arylimidazoles and Their Cations, Walba , H.Isensee , R. W., The Journal of Organic Chemistry26 ( 8 ) , 2789-2791, , 1961

      50. Condensed-Matter Simulation of a Three-Dimensional Anomaly, SemenoffG. W., Phys Rev Lett53 ( 26 ) , 2449-2452, , 1984

      51. Remote polar phonon scattering in silicon inversion layers, Hess , K.Vogl , P., Solid State Commun30 ( 12 ) , 797-799, , 1979

      52. The growth and morphology of epitaxial multilayer graphene, Hass , J.de HeerW. A.Conrad , E. H., Journal of Physics : Condensed Matter20 ( 32 ) , 323202, , 2008

      53. Solutions of Negatively Charged Graphene Sheets and Ribbons, s , C.Drummond , C.Saadaoui , H.Furtado , C. A.He , M.Roubeau , O.Ortolani , L.Monthioux , M.P ? nicaud, Journal of the American Chemical Society130 ( 47 ) , 15802-15804, , A.2008

      54. A review of chemical vapour deposition of graphene on copper, Mattevi , C.Kim , H.Chhowalla , M., J Mater Chem21 ( 10 ) , 3324-3334, , 2011

      55. Graphene : fabrication methods and thermophysical properties, EletskiiA. V.Iskandarova , I. M.Knizhnik , A . A.Krasikov , D. N., Phys-Usp+54 ( 3 ) , 227-258, , 2011

      56. Graphene transfer in vacuum yielding a high quality graphene, Lee , S.Lee , S. K.Kang , C. G.Cho , C.Lee , Y. G.Jung , U.Lee , B. H., Carbon93 , 286- 294, , 2015

      57. Healing defective CVD-graphene through vapor phase treatment, Van Lam , D.Kim , S.-M.Cho , Y.Kim , J.-H.Lee , H.-J .Yang , J.-M.Lee , S.-M., Nanoscale6 ( 11 ) , 5639-5644, , 2014

      58. First-principles study of metal adatom adsorption on graphene, ChanK. T.Neaton , J . B.Cohen , M. L., Phys Rev B77 ( 23 ) , 235430, , 2008

      59. Boron nitride substrates for high-quality graphene electronics, DeanC. R.Young , A. F.Meric , I.Lee , C.Wang , L.Sorgenfrei , S.Watanabe , K.Taniguchi , T.Kim , P.ShepardK. L.Hone , J., Nat Nanotechnol5 ( 10 ) , 722-726, , 2010

      60. Activation Energy Paths for Graphene Nucleation and Growth on Cu, Kim , H.Mattevi , C.Calvo , M. R.Oberg , J. C.Artiglia , L.Agnoli , S.Hirjibehedin , C. F.Chhowalla , M.Saiz , E., Acs Nano6 ( 4 ) , 3614-3623, , 2012

      61. First-Principles Thermodynamics of Graphene Growth on Cu Surfaces, Zhang , W.Wu , P.Li , Z.Yang , J., The Journal of Physical Chemistry C115 ( 36 ) , 17782-17787, , 2011

      62. ; Hong , B. H. , Simultaneous Etching and Doping by Cu-Stabilizing, . Kim ,J. ; RyuJ. ; Son ,; Yoo , J. M.Park , JB. ; Won ,; Lee ,K. ; ChoS.-P. ; BaeS. ; Cho ,, for High-PerformanceElectrodes . Chem Mater 2014 ,, , Graphene-Based

      63. Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films, MayadasA. F., J Appl Phys39 ( 9 ) , 4241-4245, , 1968

      64. Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling, LiX. S.Cai , W. W.Colombo , L.Ruoff , R. S., Nano Lett9 ( 12 ) , 4268-4272, , 2009

      65. Intrinsic and extrinsic performance limits of graphene devices on SiO2, Chen , J.-H.Jang , C.Xiao , S.Ishigami , M.Fuhrer , M. S., Nat Nano3 ( 4 ) , 206-209, , 2008

      66. , Influence of Copper Morphology in Forming Nucleation Seeds for Graphene, , G.;, J.;, E.;, S.; Shin , H.-J; Choi , J.-Y; Pribat ,; Lee , Y., . Nano, 11 ( 10 ) ,, , Lett

      67. Highly Stretchable and Flexible Graphene/ITO Hybrid Transparent Electrode, Liu , J.Yi , Y.Zhou , Y.Cai , H., Nanoscale Res Lett11 ( 1 ) , 108, , 2016

      68. Improving the electrical properties of graphene layers by chemical doping, KhanM. F.Iqbal , M. Z.IqbalM. W.Eom , J., Science and Technology of Advanced Materials15 ( 5 ) , 055004, , 2014

      69. 9 - Electronic transport in graphene : towards high mobility . In Graphene, BolotinK. I., Sk ? kalov ?V. ; Kaiser , A . B. , Eds . Woodhead Publishing, , 2014pp 199-227

      70. Bottom-up solution synthesis of narrow nitrogen-doped graphene nanoribbons, VoT. H.Shekhirev , M.Kunkel , D. A.Orange , F.GuinelM. J. F.Enders , A.Sinitskii , A., Chem Commun50 ( 32 ) , 4172-4174, , 2014

      71. Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells, Lang , F.Gluba , M. A.Albrecht , S.Rappich , J.Korte , L.Rech , B.NickelN. H., The Journal of Physical Chemistry Letters6 ( 14 ) , 2745-2750, , 2015

      72. Charge Transport in Polycrystalline Graphene : Challenges and Opportunities, CummingsA. W.Duong , D. L.Nguyen , V. L.Van Tuan , D.Kotakoski , J.Barrios VargasJ. E.Lee , Y. H.Roche , S., Advanced Materials26 ( 30 ) , 5079-5094, , 2014

      73. Triggering the Continuous Growth of Graphene Toward Millimeter-Sized Grains, Wu , T.Ding , G.Shen , H.Wang , H.Sun , L.Jiang , D.Xie , X.Jiang , M., Advanced Functional Materials23 ( 2 ) , 198-203, , 2013

      74. New synthesis of first stage graphite intercalation compounds with fluorides, Hamwi , A.Mouras , S.Djurado , D.Cousseins , J. C., Journal of Fluorine Chemistry35 ( 1 ) , 151, , 1987

      75. , S. ; Kim , T.-S. , Healing Graphene Defects Using Selective Electrochemical, , T. ; KimJ.-H. ; Choi ,H. ; Jung ,Y. ; Park ,. ; Choi ,. ; Cho ,S. ; LeeJ.-I . ;, Y.-D. ;, : TowardStretchable Devices . Acs Nano 2016, , Flexible

      76. Direct Imaging of Lattice Atoms and Topological Defects in Graphene Membranes, MeyerJ. C.Kisielowski , C.Erni , R.Rossell , M. D.CrommieM. F.Zettl , A., Nano Lett8 ( 11 ) , 3582-3586, , 2008

      77. Self-assembly and continuous growth of hexagonal graphene flakes on liquid Cu, Cho , S.-Y .Kim , M.-S.Kim , M.Kim , K.-J .Kim , H.-M.Lee , D.-J .Lee , S.-H.Kim , K.-B., Nanoscale7 ( 30 ) , 12820-12827, , 2015

      78. Solid-state graphitization mechanisms of silicon carbide 6H ? SiC polar faces, Forbeaux , I.Themlin , J. M.Charrier , A.Thibaudau , F.DebeverJ. M., Appl Surf Sci162-163 , 406-412, , 2000

      79. Effect of Cu surface treatment in graphene growth by chemical vapor deposition, Cho , S.-Y .Kim , M.Kim , M.-S.Lee , M.-H.Kim , K.-B., Materials Letters236 , 403-407, , 2019

      80. Increased Work Function in Few-Layer Graphene Sheets via Metal Chloride Doping, KwonK. C.Choi , K. S.Kim , S. Y., Advanced Functional Materials22 ( 22 ) , 4724-4731, , 2012

      81. Selective metal deposition at graphene line defects by atomic layer deposition, Kim , K.Lee , H.-B.-R.Johnson , R. W.Tanskanen , J. T.Liu , N.Kim , M.-G.Pang , C.Ahn , C.Bent , S. F.Bao , Z., Nat Commun5 ( 1 ) , 4781, , 2014

      82. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene, Wang , X.Tabakman , S. M.Dai , H., Journal of the American Chemical Society130 ( 26 ) , 8152-8153, , 2008

      83. Multilayered Graphene Electrode using One-Step Dry Transfer for Optoelectronics, Lee , S.Jo , Y.Hong , S.Kim , D.Lee , H. W., Curr . Opt . Photon1 ( 1 ) , 7-11, , 2017

      84. Density functional calculation of transition metal adatom adsorption on graphene, Hu , L.Hu , X.Wu , X.Du , C.Dai , Y.Deng , J., Physica B : Condensed Matter405 ( 16 ) , 3337-3341, , 2010

      85. Fabrication and applications of multi-layer graphene stack on transparent polymer, Krajewska , A.Pasternak , I.Sobon , G.Sotor , J.Przewloka , A.Ciuk , T.Sobieski , J.Grzonka , J.AbramskiK. M.Strupinski , W., Appl Phys Lett110 ( 4 ) , 041901, , 2017

      86. B. , Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator, R ? mmeliM. H.Bachmatiuk , A.Scott , A.B ? rrnertJ. H.Hoffman , V.Lin , J.-H.Cuniberti , G.B ? chner, Acs Nano4 ( 7 ) , 4206- 4210, , 2010

      87. Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition, Wu , Y . A.Fan , Y.Speller , S.Creeth , G. L.SadowskiJ. T.He , K.Robertson , A. W.Allen , C. S.Warner , J. H., Acs Nano6 ( 6 ) , 5010-5017, , 2012

      88. Universal Segregation Growth Approach to Wafer-Size Graphene from Non-Noble Metals, Liu , N.Fu , L.Dai , B.Yan , K.Liu , X.Zhao , R.Zhang , Y.Liu , Z., Nano Lett11 ( 1 ) , 297-303, , 2011

      89. Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities, EfetovD. K.Kim , P., Phys Rev Lett105 ( 25 ) , 256805, , 2010

      90. Electronic structure of graphene and doping effect on $ { \text { SiO } } _ { 2 } $, Kang , Y.-J .Kang , J.Chang , K. J., Phys Rev B78 ( 11 ) , 115404, , 2008

      91. Electronic transport in graphene : A semiclassical approach including midgap states, Stauber , T.Peres , N. M. R.Guinea , F., Phys Rev B76 ( 20 ) , 205423, , 2007

      92. Large-scale pattern growth of graphene films for stretchable transparent electrodes, KimK. S.Zhao , Y.Jang , H.Lee , S. Y.Kim , J. M.KimK. S.Ahn , J.-H.Kim , P.Choi , J.-Y .Hong , B. H., Nature457 ( 7230 ) , 706-710, , 2009

      93. Minimum Electrical and Thermal Conductivity of Graphene : A Quasiclassical Approach, Trushin , M.Schliemann , J., Phys Rev Lett99 ( 21 ) , 216602, , 2007

      94. Enhanced Graphene Mechanical Properties through Ultrasmooth Copper Growth Substrates, GriepM. H.Sandoz-Rosado , E.Tumlin , T. M.Wetzel , E., Nano Lett16 ( 3 ) , 1657-1662, , 2016

      95. , L. , Growth of Millimeter-Size Single Crystal Graphene on Cu Foils by Circumfluence, , C. ;, W. ;, C. ;, G. ;, B. ;, C. ;, Y. ;, W. ; ZhangX.-A . ;, S. ;, S. ;, Vapor Deposition .Rep., , Sci

      96. Graphene CVD growth on copper and nickel : role of hydrogen in kinetics and structure, Losurdo , M.Giangregorio , M. M.Capezzuto , P.Bruno , G., Phys Chem Chem Phys13 ( 46 ) , 20836-20843, , 2011

      97. Chemical vapor deposition growth of 5mm hexagonal single-crystal graphene from ethanol, Chen , X.Zhao , P.Xiang , R.Kim , S.Cha , J.Chiashi , S.Maruyama , S., Carbon94 , 810-815, , 2015

      98. Mechanical properties of polycrystalline graphene based on a realistic atomistic model, Kotakoski , J.Meyer , J. C., Phys Rev B85 ( 19 ) , 195447, , 2012

      99. Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single- Crystal Graphene, Vlassiouk , I.Regmi , M.Fulvio , P.Dai , S.Datskos , P.Eres , G.Smirnov , S., Acs Nano5 ( 7 ) , 6069-6076, , 2011

      100. Direct Growth of Bilayer Graphene on SiO2 Substrates by Carbon Diffusion through Nickel, Peng , Z.Yan , Z.Sun , Z.Tour , J. M., Acs Nano5 ( 10 ) , 8241-8247, , 2011

      101. Large area , continuous , few-layered graphene as anodes in organic photovoltaic devices, Wang , Y.Chen , X.Zhong , Y.Zhu , F.Loh , K. P., Appl Phys Lett95 ( 6 ) , 063302, , 2009

      102. Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene, HwangE. H.Das Sarma , S., Phys Rev B77 ( 11 ) , 115449, , 2008

      103. Large Area , Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition, Reina , A.Jia , X.Ho , J.Nezich , D.Son , H.Bulovic , V.Dresselhaus , M. S.Kong , J., Nano Lett9 ( 1 ) , 30-35, , 2008

      104. Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene, Zhou , H.Yu , W. J.Liu , L.Cheng , R.Chen , Y.Huang , X.Liu , Y.Wang , Y.Huang , Y.Duan , X., Nat Commun4, , 2013

      105. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li , X.Zhu , Y.Cai , W.Borysiak , M.Han , B.Chen , D.PinerR. D.Colombo , L.Ruoff , R. S., Nano Lett9 ( 12 ) , 4359-4363, , 2009

      106. Kinetics of Phase Change . II Transformation ? Time Relations for Random Distribution of Nuclei, Avrami , M., The Journal of Chemical Physics 19408 ( 2 ) , 212-224,

      107. Y. ; Murakami , Y. ; Hobara , D. , Production of a 100-m-long high-quality graphene transparent, 5 . KobayashiT. ; BandoM. ; KimuraN. ; ShimizuK. ; KadonoK. ; UmezuN. ; MiyaharaK. ; HayazakiS. ; NagaiS. ; Mizuguchi, film by roll-to-rolldeposition and transfer process . Appl, , chemical

      108. Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth, Dong , J.Wang , H.Peng , H.Liu , Z.Zhang , K.Ding , F., Chemical Science8 ( 3 ) , 2209-2214, , 2017

      109. Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium, Kim , M.Kim , K.-J .Lee , S.-J .Kim , H.-M.Cho , S.-Y .Kim , M.-S.Kim , S.-H.Kim , K.-B., Acs Appl Mater Inter9 ( 1 ) , 701-709, , 2017

      110. Enhancement of the effectiveness of graphene as a transparent conductive electrode by AgNO3doping, ShinD. H.Lee , K. W.Lee , J. S.KimJ. H.Kim , S.Choi , S.-H., Nanotechnology25 ( 12 ) , 125701, , 2014

      111. Comparative electron spectroscopic studies of surface segregation on SiC ( 0001 ) and SiC ( 0001 ?, Muehlhoff , L.Choyke , W. J.Bozack , M. J.Jr.J. T. Y., J Appl Phys60 ( 8 ) , 2842-2853, , 1986

      112. Self-consistent effective-mass theory for intralayer screening in graphite intercalation compounds, DiVincenzoD. P.Mele , E. J., Phys Rev B29 ( 4 ) , 1685-1694, , 1984

      113. Work functions of elements expressed in terms of the Fermi energy and the density of free electrons, Halas , S.Durakiewicz , T., Journal of Physics : Condensed Matter10 ( 48 ) , 10815-10826, , 1998

      114. Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices, Wei , D.Lu , Y.Han , C.Niu , T.Chen , W.WeeA. T. S., Angewandte Chemie International Edition52 ( 52 ) , 14121-14126, , 2013

      115. Electrochemical Delamination of CVD-Grown Graphene Film : Toward the Recyclable Use of Copper Catalyst, Wang , Y.Zheng , Y.Xu , X.Dubuisson , E.Bao , Q.Lu , J.Loh , K. P., Acs Nano5 ( 12 ) , 9927-9933, , 2011

      116. Highly Flexible , and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics, Gomez De Arco , L.Zhang , Y.Schlenker , C. W.Ryu , K.Thompson , M. E.Zhou , C., Acs Nano4 ( 5 ) , 2865-2873, , Continuous2010

      117. Growth of Continuous Monolayer Graphene with Millimeter-sized Domains Using Industrially Safe Conditions, Wu , X.Zhong , G.L.Sugime , H.Esconjauregui , S.Robertson , A. W.Robertson , J., Sci Rep-Uk6 , 21152, , 2016

      118. Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper, Li , X.Magnuson , C. W.Venugopal , A.Tromp , R. M.Hannon , J . B.Vogel , E. M.Colombo , L.Ruoff , R. S., Journal of the American Chemical Society133 ( 9 ) , 2816-2819, , 2011

      119. Cooperative Island Growth of Large-Area Single-Crystal Graphene on Copper Using Chemical Vapor Deposition, Eres , G.Regmi , M.Rouleau , C. M.Chen , J.IvanovI. N.Puretzky , A . A.Geohegan , D. B., Acs Nano8 ( 6 ) , 5657-5669, , 2014

      120. Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition, Gao , L.Ren , W.Zhao , J.Ma , L.-P.Chen , Z.Cheng , H.-M., Appl Phys Lett97 ( 18 ) , 183109, , 2010

      121. Low-Temperature Chemical Vapor Deposition Growth of Graphene from Toluene on Electropolished Copper Foils, Zhang , B.Lee , W. H.Piner , R.Kholmanov , I.Wu , Y.Li , H.Ji , H.Ruoff , R. S., Acs Nano6 ( 3 ) , 2471-2476, , 2012

      122. Graphene on a Hydrophobic Substrate : Doping Reduction and Hysteresis Suppression under Ambient Conditions, Lafkioti , M.Krauss , B.Lohmann , T.Zschieschang , U.Klauk , H.KlitzingK. v.Smet , J. H., Nano Lett10 ( 4 ) , 1149-1153, , 2010

      123. Chemical vapor deposition synthesis of graphene on copper with methanol , ethanol , and propanol precursors, Guermoune , A.Chari , T.Popescu , F.Sabri , S. S.Guillemette , J.SkulasonH. S.Szkopek , T.Siaj , M., Carbon49 ( 13 ) , 4204- 4210, , 2011

      124. DFT calculation for adatom adsorption on graphene sheet as a prototype of carbon nanotube functionalization, Ishii , A.Yamamoto , M.Asano , H.Fujiwara , K., Journal of PhysicsConference Series100 ( 5 ) , 052087, , 2008

      125. Kinetics of distribution of infections in networks . Physica A : Statistical Mechanics and its Applications, Avramov , I., 379 ( 2 ) , 615-620, , 2007

      126. Phonon Mean Free Path in Few Layer Graphene , Hexagonal Boron Nitride , and Composite Bilayer h-BN/Graphene, Gholivand , H.Donmezer , N., IEEE Transactions on Nanotechnology16 ( 5 ) , 752-758, , 2017

      127. Dependence of Field-Effect Mobility of Graphene Grown by Thermal Chemical Vapor Deposition on Its Grain Size, Yagi , K.Yamada , A.Hayashi , K.Harada , N.Sato , S.Yokoyama , N., Jpn J Appl Phys52 ( 11 ), , 2013

      128. Electrical-Resistivity Model for Polycrystalline Films : the Case of Arbitrary Reflection at External Surfaces, MayadasA. F.Shatzkes , M., Phys Rev B1 ( 4 ) , 1382- 1389, , 1970

      129. Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates, Chen , J.Guo , Y.Wen , Y.Huang , L.Xue , Y.Geng , D.Wu , B.Luo , B.Yu , G.Liu , Y., Advanced Materials25 ( 7 ) , 992-997, , 2013

      130. , Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor, . Chen ,; Ji ,; Chou ,; Li ,; Li ,; Suk , J.; Piner ,; Liao ,; Cai ,;, R., . Advanced, 25 ( 14 ) ,, , Materials

      131. Highly stable and stretchable graphene ? polymer processed silver nanowires hybrid electrodes for flexible displays, Zhang , Q.Di , Y.Huard , C. M.GuoL. J.Wei , J.Guo , J., Journal of Materials Chemistry C3 ( 7 ) , 1528-1536, , 2015

      132. Chemical Vapor Deposition of Graphene on Copper from Methane , Ethane and Propane : Evidence for Bilayer Selectivity, WasseiJ. K.Mecklenburg , M.Torres , J . A.Fowler , J. D.Regan , B. C.KanerR. B.Weiller , B. H., Small8 ( 9 ) , 1415- 1422, , 2012

      133. Role of Dopants in Long-Range Charge Carrier Transport for p-Type and n-Type Graphene Transparent Conducting Thin Films, Bult , J . B.Crisp , R.C. L.Blackburn , J. L., Acs Nano7 ( 8 ) , 7251-7261, , 2013

      134. Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation, Wang , H.Wang , G.Bao , P.Yang , S.Zhu , W.Xie , X.Zhang , W.-J., Journal of the American Chemical Society134 ( 8 ) , 3627-3630, , 2012

      135. , S.-H. , Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O [, , T.-K. ;, W. ; ChoiK.-J . ;, W.-C. ; KimJ. H. ; LeeD.-J . ; KimK.-B . ;, H. ;, 2 ] . ElectrochemicalLetters 2009 , 12 ( 11, , and

      136. Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition, Kim , J.Ishihara , M.Koga , Y.Tsugawa , K.Hasegawa , M.Iijima , S., Appl Phys Lett98 ( 9 ) , 091502, , 2011

      137. The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films, N.BilgeM. D.Utlu , G., Surface and Coatings Technology201 ( 19 ) , 8377-8381, , 2007

      138. Catalytic properties and coking stability of new anode materials for internal methane reforming in the intermediate temperature solid oxide fuel cells, Kharlamova , T.Pavlova , S.Sadykov , V.Krieger , T.Alikina , G.Argirusis , C., Catal Today146 ( 1 ) , 141-147, , 2009

      139. Electron Scattering and Electrical Conductance in Polycrystalline Metallic Films and Wires : Impact of Grain Boundary Scattering Related to Melting Point, ZhuY. F.Lang , X. Y.ZhengW. T.Jiang , Q., Acs Nano4 ( 7 ) , 3781-3788, , 2010

      140. Effective electron mobility in Si inversion layers in metal ? oxide ? semiconductor systems with a high-κ insulator : The role of remote phonon scattering, FischettiM. V.Neumayer , D. A.Cartier , E. A., J Appl Phys90 ( 9 ) , 4587-4608, , 2001

      141. Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition, Lee , D.Kwon , G. D.Kim , J. H.Moyen , E.Lee , Y. H.Baik , S.Pribat , D., Nanoscale6 ( 21 ) , 12943-12951, , 2014

      142. Imperial College of Science and Technology. , The use of thin films in physical investigations ; a NATO Advanced Study Institute held at the Imperial College of Science and Technology, Anderson , J. C.North Atlantic Treaty Organization, University of London , 19-24 JulyAcademic Press : London , New York ,, , 19651966p xix462 p

      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼