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RISSTa_(2)O_(5) films are recognized as promising dielectric for future DRAM'S and the electrical properties of Ta_(2)O_(5) films greatly depend on the heating condition In this paper, the temperature effect was described by the electrical properties of W...
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RISS 인기검색어
열처리에 따른 Ta_(2)O_(5) 박막의 특성 = The properties of Ta_(2)O_(5) thin film by the annealing temperature change
한글로보기https://www.riss.kr/link?id=A40003557
- 저자
- 발행기관
- 학술지명
- 권호사항
-
발행연도
1997
-
작성언어
Korean
-
KDC
500
-
자료형태
학술저널
-
수록면
1-6(6쪽)
- 제공처
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
Ta_(2)O_(5) films are recognized as promising dielectric for future DRAM'S and the electrical properties of Ta_(2)O_(5) films greatly depend on the heating condition In this paper, the temperature effect was described by the electrical properties of W/Ta_(2)O_(5)/S_(1) structure when the heating temperature was vaned from 500 to 900 C in N_(2) for 30㎜ and the degree of temperature was 100℃.
In ln(J/E^(2)) Vs 1/E plot of typical I-V data, the Fowler-Nordheim tunneling could indicated as the dominant mode of current transports at low temperatures but, could not indicated as the dominant mode of current transports at temperatures above 700℃ due to crystallization of Ta_(2)O_(5) In the high frequency annealing temperature, and increases with annealing temperature, then we would induced to increasing of the densification.
In ln(J/E^(2)) Vs 1/E plot of typical I-V data, the Fowler-Nordheim tunneling could indicated as the dominant mode of current transports at low temperatures but, could not indicated as the dominant mode of current transports at temperatures above 700℃ due to crystallization of Ta_(2)O_(5) In the high frequency annealing temperature, and increases with annealing temperature, then we would induced to increasing of the densification.
Ta_(2)O_(5) films are recognized as promising dielectric for future DRAM'S and the electrical properties of Ta_(2)O_(5) films greatly depend on the heating condition In this paper, the temperature effect was described by the electrical properties of W/Ta_(2)O_(5)/S_(1) structure when the heating temperature was vaned from 500 to 900 C in N_(2) for 30㎜ and the degree of temperature was 100℃.
In ln(J/E^(2)) Vs 1/E plot of typical I-V data, the Fowler-Nordheim tunneling could indicated as the dominant mode of current transports at low temperatures but, could not indicated as the dominant mode of current transports at temperatures above 700℃ due to crystallization of Ta_(2)O_(5) In the high frequency annealing temperature, and increases with annealing temperature, then we would induced to increasing of the densification.
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