Preparation of ferroelectric PZT thin films by plasma enhanced chemical vapor deposition using metalorganicprecursors

다국어 초록 (Multilingual Abstract)

The low temperature and non-thermal equilibrium process is the major advantage of plasma enhanced chemical vapor deposition (PECVD)
method for thin film deposition. In this study, the preparation of lead zirconate titanate (PZT) thin films by PECVD has been evaluated.
As-deposited PZT thin films prepared via PECVD with Pb(C2H5)4, Ti(O-i-C3H7)4 and Zr(O-i-C4H9)4 source had an amorphous phase and
transformed into a crystalline structure from the annealing temperature of around 500 8C under an oxygen ambient. Change of Pb content in the
film did not occur under a wide range of annealing temperatures and times, but the surface morphology became coarser with an increase of Pb
content. The dielectric constant was strongly affected by the PZT film thickness. Typically the dielectric constant of PZT (Zr/Ti = 54/46) film was
572 at a thickness of 240 nm. Additionally, the film had a remnant polarization, 2Pr,of 42 mC/cm2 and a coercive filed, Er, of 88 kV/cm.
# 2007 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

참고문헌 (Reference)

1 J.F. Scott, 299-, 1989

2 Z. Surowiak, 49 : 1350-, 1978

3 J. Carrano, 255-, 1989

4 S.B. Krupanidhi, 54 : 6601-, 1983

5 T. Fukami, 30 : 2155-, 1991

6 D.F. Ryder Jr., 21 : 971-, 1992

7 J. Chen, 71 : 4465-, 1992

8 Y. Takahashi, 25 : 3950-, 1990

9 B.A. Tuttle, 7 : 1876-, 1992

10 C.H. Peng, 61 : 16-, 1992

11 J.H. Choi, 74 : 6413-, 1993

12 C.H. Wang, 37 : 1062-, 2000

13 J.S. Horwitz, 59 : 1565-, 1991

14 O. Auciello, 73 : 5197-, 1993

15 T. Mihara, 31 : 1872-, 1992

16 K. Nishida, 272 : 789-, 2004

17 C.A. Paz de Araujo, 104 : 241-, 1990

18 W.G. Lee, 5 : 107-, 1994

19 S.B. Krupanidhi, 71 : 376-, 1992

20 K. Kushida, 50 : 1800-, 1987

21 Won Gyu Lee, "Formation of PZT from Multilayer-Structured PbTiO3 and PbZrO3 Thin Films Prepared by Plasma-Enhanced Chemical Vapor Deposition" 한국공업화학회 10 (10): 379-383, 2004