Semiconducting Channel Self-Imposed in Metallic Graphene Using an Oxygen Ion Reaction

다국어 초록 (Multilingual Abstract)

A graphene transistor was simply fabricated by employing ZnO deposition into metallic graphene,for which a source-drain electrode and a semiconductor channel could be formed concurrently. Theelectric properties of graphene could be adjusted by using ZnO thin film because oxygen was injectedinto the surface of metallic graphene. The surface oxidation of metallic graphene results in enhancedp-type semiconductor characteristics, especially in an improved on/off current ratio. The degree ofthe self-imposed semiconducting property is proportional to the degree of oxidation occurring onthe graphene surface.

참고문헌 (Reference)

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