<P>The effect of substitution pattern of the linear-type π-conjugated oligothiophenes is examined. The material solubility, thermal properties, and charge transport characteristics of two hexyl subsituted quinquethiophenes (DH5T) were determi...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107611144
-
2015
-
학술저널
148-151(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The effect of substitution pattern of the linear-type π-conjugated oligothiophenes is examined. The material solubility, thermal properties, and charge transport characteristics of two hexyl subsituted quinquethiophenes (DH5T) were determi...
<P>The effect of substitution pattern of the linear-type π-conjugated oligothiophenes is examined. The material solubility, thermal properties, and charge transport characteristics of two hexyl subsituted quinquethiophenes (DH5T) were determined along with the characteristics of an organic field-effect transistor (OFET). The solubility of 4,7-bis (3’-hexyl-2,2’-bithiophene-5-yl) thiophene (<I>β</I>-DH5T), which featured a lateral substitution, was significantly better than that of <I>α</I>,<I>α</I>’-dihexylquinquethiophene (<I>α</I>-DH5T) by altering the directional position of the alkyl group, which makes it a good candidate for solution-processed OFETs. Despite the well-defined vertical alignment of <I>α</I>-DH5T, the hole mobility of the <I>β</I>-DH5T film (3.02 × 10<SUP>-</SUP><SUP>3</SUP> cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>) was one order of magnitude higher than the hole mobility of the <I>α</I>-DH5T film (2.47 × 10<SUP>-</SUP><SUP>4</SUP> cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>) prepared by solution processing.</P>
A Study on the Effect of Binder Content for Pore Property of Fe Foam Using Slurry Coating Method
A Study on Post Weld Heat Treatment of Friction Stir Welded Al2195 Blank for Spin Forming
A Study on Different Welding Processes of IN718 for Elevated Temperature Application